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	1. Geometrical and Physical Interpretations of Electronic Harmonic Oscillations in Four Space Dimensions
	Kunming Xu
	Physics 13 December 2005
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	Abstract:Following a previous proposition of quaternity spacetime for electronic orbitals in neon shell, this paper describes the geometrical course each electron takes as it oscillates harmonically within a certain quaternity space dimension and provides the concrete connections between geometries and trigonometric wavefunctions that observe Pythagorean theorem. By integrating four quaternity space dimensions with conventional Cartesian coordinate systems in calculus, we explain electronic motions by the Maxwell equation and general Stokes theorem from the principles of rotation operation and space and time symmetry. Altogether with the previous reports, we have effectively established quaternity spacetime as a successful theory in elucidating the orbital shapes and motions of electrons within inert atoms such as helium and neon. We point out once again that 2px, 2py, and 2pz orbitals have different geometrical shapes as well as orthogonal orientations, contrary to the traditional 2p orbital model.
	TO cite this article:Kunming Xu. Geometrical and Physical Interpretations of Electronic Harmonic Oscillations in Four Space Dimensions[OL].[13 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4324


	2. Temporal distinction between radiative recombination and exciton emission in C9-PPV Solid State Cathodoluminescence
	Xu Zheng,Zhang Fujun,Zhao Suling ,Meng Lijian
	Physics 13 December 2005
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	Abstract:The origin and spectral characteristics of recombination and exciton emission was shown in [1], here their temporal characteristics in frequency domain were investigated. Their waveform showed the less lifetime of exciton emission in comparison with the radiative recombination. The dependence of light intensity on the frequency of applied voltage showed further the lifetime of recombination radiation being larger than 110-2second, that of exciton emission less than 510-5second.
	TO cite this article:Xu Zheng,Zhang Fujun,Zhao Suling , et al. Temporal distinction between radiative recombination and exciton emission in C9-PPV Solid State Cathodoluminescence[OL].[13 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4305

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	3. On effect of regular S=1 dilution of S=1/2 antiferromagnetic Heisenberg chains by a quantum Monte Carlo simulation
	Jin Fengping,Xu Zhaoxin,Ying Heping,Zheng Bo
	Physics 13 December 2005
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	Abstract:The effect of S1=1 regularly dilution in S2=1/2 isotropic antiferromagnetic chain is investigated by a quantum Monte Carlo simulation. Our numerical results show that two kinds of ground-state phases alternate with a variation of the S1=1 concentration. When the effective spin in one unit cell is half-integer the ground state is ferrimagnetic with gapless energy spectrum and the magnetism decreases with decreasing of spin S1 concentration,P=1/K. While the effective spin is integer, a non-magnetic ground state with a gapped spectrum is emerged, and the gap decays gradually in a tendency fitted as {1.25*(P)^0.5}.
	TO cite this article:Jin Fengping,Xu Zhaoxin,Ying Heping, et al. On effect of regular S=1 dilution of S=1/2 antiferromagnetic Heisenberg chains by a quantum Monte Carlo simulation[OL].[13 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4304


	4. Computer simulations of two-dimensional melting with dipole-dipole interactions
	S. Z. Lin,B. Zheng,S. Trimper
	Physics 12 December 2005
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	Abstract:We perform molecular dynamics and Monte Carlo simulations of two-dimensional melting with dipole-dipole interactions. Both static and dynamic behaviors are examined. In the isotropic liquid phase, the bond orientational correlation length ξ6 and susceptibility χ6 are measured, and the data are fitted to the theoretical ansatz. An algebraic decay is detected for both spatial and temporal bond orientational correlation functions in an intermediate temperature regime, and it provides an explicit evidence for the existence of the hexatic phase. From the finite-size scaling analysis of the global bond orientational order parameter, the disclination unbinding temperature Ti is estimated. In addition, from dynamic Monte Carlo simulations of the positional order parameter, we extract the critical exponents at the dislocation unbinding temperature Tm. All the results are in agreement with those from experiments and support the KTHNY theory.
	TO cite this article:S. Z. Lin,B. Zheng,S. Trimper. Computer simulations of two-dimensional melting with dipole-dipole interactions[OL].[12 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4273


	5. Transmission Line Realization of Subwavelength Resonator Formed by a Pair of Conventional and LHM Slabs
	Tian Jiang,Yijun Feng
	Physics 12 December 2005
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	Abstract:In this paper, the authors present the transmission line (TL) realization of one-dimensional subwavelength resonator formed by a pair of conventional right-handed material (RHM) and left-handed material (LHM). In such a resonator, a novel resonant mode with the resonant frequency depending on the length ratio of the RH/LH TL sections occurs as a consequence of the full phase compensation due to the backward wave in the LH TL section. The theoretical circuit-model analyses are supported by simulation and experimental evidence on resonators with different RH/LH length ratios.
	TO cite this article:Tian Jiang,Yijun Feng. Transmission Line Realization of Subwavelength Resonator Formed by a Pair of Conventional and LHM Slabs[OL].[12 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4236


	6. Analysis of Band Edge in Three-component Resonant Material
	Yiqun Ding,Zhengyou Liu
	Physics 08 December 2005
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	Abstract:Based on the simple analytic model describing the three-component phononic crystal with local resonance[1], we present the expression for the first resonant frequency and calculate the displacement of each component corresponding to the stop band edge to further clarify the physics at resonance region. It demonstrates that the displacement of the barycenter of the basic unit turns to zero at the upper edge of the band gap.
	TO cite this article:Yiqun Ding,Zhengyou Liu. Analysis of Band Edge in Three-component Resonant Material[OL].[ 8 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4172


	7. Analysis of the magnetic properties of R2Fe17 and R2Fe17H3 (R=Tb,Ho,Er)
	Rugui Ma,Yu Yan,Du Xiaobo,Wang Xiangqun,Su Feng,Jin Hanmin
	Physics 30 November 2005
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	Abstract:The value of crystalline-electric-field parameters Anm for R2Fe17 and R2Fe17H3 (R=Tb,Ho,Er) are obtained by fitting calculation to the magnetization curves along the crystal axes measured on the single crystal at 4.2 K and higher temperatures. The insertion of hydrogen element in R2Fe17 significantly affects CEF parameters Anm. Using exchange field 2µBHex estimated from the fit of the temperature dependence of the spontaneous magnetization combined with inelastic neutron scattering experiment and fitted Anm, the calculation reproduces the experiments well.
	TO cite this article:Rugui Ma,Yu Yan,Du Xiaobo, et al. Analysis of the magnetic properties of R2Fe17 and R2Fe17H3 (R=Tb,Ho,Er)[OL].[30 November 2005] http://en.paper.edu.cn/en_releasepaper/content/3983


	8. Investigation of the electro-optical activity and electro-optic effect of La3Ga5SiO14 crystal
	Zhaojun Liu,Qingpu Wang,Xingyu Zhang ,Jun Chang
	Physics 30 November 2005
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	Abstract:We study the electro-optical activity (EOA) of La3Ga5SiO14 (langasite, LGS), which is optically active along its optic axis. The theoretical analysis shows that EOA won’t change the rotatory power along the optic axis of LGS. An experiment scheme called “elliptic analyzer” is used. The relation curves of optical activity vs. applied electric field and field-induced birefringence vs. applied electric field are obtained. The first curve verifies the theoretical statement and from the second one we can obtain the electro-optical coefficient r11 to be 2.2 pm/V.
	TO cite this article:Zhaojun Liu,Qingpu Wang,Xingyu Zhang , et al. Investigation of the electro-optical activity and electro-optic effect of La3Ga5SiO14 crystal[OL].[30 November 2005] http://en.paper.edu.cn/en_releasepaper/content/3933


	9. Interfacial effects of TiN/Si3N4 super-hard multilayer films studied by fluorescence x-ray absorption fine structure
	Zhiyun Pan,Zhihu Sun,Zhi Xie,Luyuan Hao,Shiqiang Wei
	Physics 29 November 2005
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	Abstract:Fluorescence x-ray absorption fine structure (XAFS) and x-ray diffraction (XRD) are used to study the structures of super-hard TiN/Si3N4 multilayer films deposited by reactive magnetron sputtering at temperatures of 20, 200, 500 and 800 °C. The resultsclearly reveal the presence of interfacial intermixing between adjacent TiN and Si3N4 layers. And the interlayer is composed of TiSixN1-x solid solution with a NaCl-like structure. Increasing the growth temperature from 20 to 500 oC, the crystalline quality of pure TiN layer improves significantly, and the thickness of interlayer rises from 2.5 to 5.0 A. For the TiN/Si3N4 multilayer film grown at 800 oC, the interfacial layer is composed of TiSi0.3N0.7 solid solution and reaches the thickness of 7.8 A, where the Ti-N bond length (2.06 A) is significantly shrunk as compared with the value (2.12 A) in the pure TiN layer. We propose that the TiSixN1-x interlayer with obviously contracted Ti-N bond length is an important hardening factor for the crystalline/amorphous TiN/Si3N4 multilayer films grown at high temperatures.
	TO cite this article:Zhiyun Pan,Zhihu Sun,Zhi Xie, et al. Interfacial effects of TiN/Si3N4 super-hard multilayer films studied by fluorescence x-ray absorption fine structure[OL].[29 November 2005] http://en.paper.edu.cn/en_releasepaper/content/3873


	10. Zinc-blende Structural GaP, GaAs and GaSb Semiconductors studied by Multiple-scattering x-ray absorption fine structure
	Shiqiang Wei,Zhihu Sun
	Physics 29 November 2005
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	Abstract:The dependence of multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) effects on the nearest neighbors for GaP, GaAs and GaSb semiconductors with zinc blende structure has been investigated in this work. The overall MS contributions increase rapidly as the nearest neighbors around Ga atoms going from P to As and Sb. The MS effects within the first three coordination shells are dominated by a triangle double-scattering path DS2 (Ga0　B1　B2　Ga0) which contributes an EXAFS signal destructively interfering with that of the second shell single-scattering path (SS2). For GaP with a light element as the first neighbor, its MS contributions are negligible with respect to the SS2 contribution. For GaAs (or GaSb) with a heavier element As (or Sb) as the first neighbor, the MS path of DS2 produces a strong EXAFS oscillation. Based on these results, we present an optimized and simplified MS-EXAFS method for analyzing the higher shell local structure of III-V semiconductors with zinc blende-like structure.
	TO cite this article:Shiqiang Wei,Zhihu Sun. Zinc-blende Structural GaP, GaAs and GaSb Semiconductors studied by Multiple-scattering x-ray absorption fine structure[OL].[29 November 2005] http://en.paper.edu.cn/en_releasepaper/content/3855

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