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1. The surface and photoluminescence properties of GaAs passivated by wet chemical method | |||
Chen Fang,Tang Jilong,Liu Guojun,Wei Zhipeng,Fang Dan,Gao Xian,Xu Zhikun,Fang Xuan,Ma Xiaohui,Wang Xiaohua | |||
Physics 22 July 2014 | |||
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Abstract:The optical and chemical properties of gallium arsenide (GaAs) surfaces treated by ammonium sulfide ((NH4)2S) treatments were studied via low-temperature photoluminescence (PL). From the PL mapping and Atomic Force Microscope (AFM) results, the treatment process by (NH4)2S is quite effective to remove the oxide layer of GaAs.The PL intensity of (NH4)2S-passivated sample was higher than the untreated sample, and the homogeneity of passivated surface was much better. This strategy provides superior promising passivation method for III-V compound semiconductor material in high-speed and optoelectronic device applications. | |||
TO cite this article:Chen Fang,Tang Jilong,Liu Guojun, et al. The surface and photoluminescence properties of GaAs passivated by wet chemical method[OL].[22 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604842 |
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