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	1. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes
	Gao Xian,Tang Jinglong,Fang Dan,Wang Shuangpeng,Zhao Haifeng,Wei Zhipeng,Fang Xuan,Wang Xiaohua,Xu Zhikun,Ma Xiaohui
	Physics 26 July 2014
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:Many researches pay attention to the metal-semiconductor interface barrier height, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouse wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by MBE on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using Atomic Layer Deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-woltage(I-V) characteristics. Experimental result shown that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.
	TO cite this article:Gao Xian,Tang Jinglong,Fang Dan, et al. The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes[OL].[26 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604839

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