Abstract:GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs was grown by molecular beam epitaxy. Temperature and excitation power dependent photoluminescence (PL) of the MQWs were investigated in detail. The PL spectra showed a unique emission evolution. Two competitive peaks were observed from 40 to 90 K in temperature dependent PL spectra. The peak located at low energy shoulder was confirmed to be localized states emission (LE) by the long tail and the inverted S-shaped emission band width obtained from the temperature dependent emission. The high energy side peak was confirmed to be free carrier emission by Varshni equation fitting. It is observed that the LE peak exhibited blue shift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. As a result, the localized states in GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs have been confirmed and explained by carrier dynamics.

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	1. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy
	GE Xiaotian,WANG Dengkui,GAO Xian,FANG Xuan,NIU Shouzhu,GAO Hongyi,TANG Jilong,WANG Xiaohua,WEI Zhipeng,CHEN Rui
	Physics 27 November 2016
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	Abstract:GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs was grown by molecular beam epitaxy. Temperature and excitation power dependent photoluminescence (PL) of the MQWs were investigated in detail. The PL spectra showed a unique emission evolution. Two competitive peaks were observed from 40 to 90 K in temperature dependent PL spectra. The peak located at low energy shoulder was confirmed to be localized states emission (LE) by the long tail and the inverted S-shaped emission band width obtained from the temperature dependent emission. The high energy side peak was confirmed to be free carrier emission by Varshni equation fitting. It is observed that the LE peak exhibited blue shift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. As a result, the localized states in GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs have been confirmed and explained by carrier dynamics.
	TO cite this article:GE Xiaotian,WANG Dengkui,GAO Xian, et al. Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy[OL].[27 November 2016] http://en.paper.edu.cn/en_releasepaper/content/4711855


	2. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth
	LIN Guangyang,LAN Xiaoling,WANG Chen,CHEN Chaowen,CHNE Ningli,LI Cheng,CHEN Songyan,HUANG Wei,LAI Hongkai
	Physics 13 November 2015
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	Abstract:Strain in germanium (Ge) and germanium-on-insulator (GOI) stripes with SiNx capping layer was modulated through varying stripe width and NH3/SiH4 gas ratio for growth of SiNx. It was found that tensile strain increases with augment of stripe width for Ge stripes, while decreases for GOI stripes. The divergence is attributable to higher strain relaxation in SiNx capping layer for Ge stripes and larger strain loss into SiO2 and Si substrate for GOI stripes as stripe width increase. Silicon nitride capping layers deposited at smaller NH3/SiH4 ratio result in larger tensile strain in Ge layer, which can be attributed to rich Si-H bonds in the SiNx layer.
	TO cite this article:LIN Guangyang,LAN Xiaoling,WANG Chen, et al. Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth[OL].[13 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661255

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	3. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts
	Li Cheng,Tang Mengrao,Lin Guangyang,Huang Wei,Wang Chen
	Physics 12 November 2015
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	Abstract:The mechanism to modulate the effective Schottky barrier height of NiGe/Ge contacts with impurity incorporation is still under debate. We experimentally demonstrate that ion implant damages, rather than interface passivation, play a dominant role in lowering the effective Schottky barrier height of NiGe/n-Ge contacts in the case of selenium and silicon implantation. Selenium segregated at the interface between NiGe and Ge acts as neither donor nor passivator for alleviation of Fermi- level pinning effect to greatly influence on the electrical characteristics. It is rather different from the role of phosphorus, which segregates at the interface leading to good ohmic behavior for the NiGe/n-Ge contacts by narrowing Schottky barrier. Si doping in Ge slightly increases the effective barrier height of the NiGe/n-Ge contacts.
	TO cite this article:Li Cheng,Tang Mengrao,Lin Guangyang, et al. Influence of ion- implantation on the effective Schottky barrier height of NiGe/n-Ge contacts[OL].[12 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661258


	4. The structural and optical properties of Be-doped GaAs grown by MBE
	Huimin Jia,Zhipeng Wei,Liang Chang,Dan Fang,Jilong Tang,Xuan Fang,Xiaohua Wang,Xiaohui Ma
	Physics 29 July 2014
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	Abstract: In this paper, Be-doped GaAs were grown by molecular beam epitaxy (MBE), by changing Be resource temperature, we obtained different doping concentration GaAs samples. The morphologies and electrics properties of the samples were investigated by AFM and Hall measurement. Especially, in low temperature and temperature dependent PL spectra, the Be acceptor related emission were recognized, with the doping concentration increasing, the Be acceptor related emission enhanced too.
	TO cite this article:Huimin Jia,Zhipeng Wei,Liang Chang, et al. The structural and optical properties of Be-doped GaAs grown by MBE[OL].[29 July 2014] http://en.paper.edu.cn/en_releasepaper/content/4604845


	5. Theoretical analysis of the double-layer emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells
	HUANG Haibin,GAO Jiang,Wolfgang R. Fahrner,ZHOU Lang
	Physics 14 April 2014
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	Abstract:A new emitter structure containing two a-Si:H layers with different doping concentrations is designed for the a-Si:H/c-Si heterojunction solar cell. Based on an AFORS-HET simulation it is concluded that an efficiency of 26.0% （AM1.5） can be obtained by means of the new emitter structure. The operation mechanism of this improvement is analyzed. It is found that: 1) the double layer emitter enhances the internal electrical field and the carriers' drift velocity. In turn the quantum efficiency of the devices at short wavelengths and the short circuit current of the solar cells increase. 2) The tunneling probability at the interface of the transparent conductive oxide layer and the emitter is enhanced due to the heavier doped layers of the double-layer emitter. This reduces the series resistances.
	TO cite this article:HUANG Haibin,GAO Jiang,Wolfgang R. Fahrner, et al. Theoretical analysis of the double-layer emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells[OL].[14 April 2014] http://en.paper.edu.cn/en_releasepaper/content/4593444


	6. Confirmation for the nonlinear shift of absorption edge in narrow-gap HgCdTe
	YUE Fangyu
	Physics 21 December 2012
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	Abstract:Nonlinear shift of the absorption edge in HgCdTe was observed in our previous works, where the reason has been tentatively ascribed to the existence of impurity levels. Here, we represent the calculation results of the temperature dependence of the Fermi level in doped-HgCdTe as a function of compositions ( value), doping levels, and ionization (activation) energies of impurity levels. The special temperature points on the Fermi level have been determined, which confirms the experimental observation. This result can also be used to interpret the difference between the absorption and photoluminescence spectra in narrow-gap semiconductors like HgCdTe.
	TO cite this article:YUE Fangyu. Confirmation for the nonlinear shift of absorption edge in narrow-gap HgCdTe[OL].[21 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4507327


	7. High temperature thermoelectric properties of nanostructured (Bi,Pb)-Sr-Co-O thin films
	Yan Guoying,Chen Shanshan,Wang Shufang,Liu Fuqiang,Wang Jianglong,YU Wei,Fu Guangsheng
	Physics 13 December 2012
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	Abstract:Nanostructured Bi(Pb)-Sr-Co-O thin films have been achieved by chemical solution deposition technique. X-ray diffraction measurement reveals that the films are highly c-axis oriented and scanning electron microscope as well as atomic force microscopy show that the average grain size in the films is about 80 nm. The resistivity and seebeck coefficient of the films at 980 K are about 6 mohm cm and 196 μV/K, resulting in a much higher power factor of 0.6 mW/mK2 than that of the polycrystalline bulks. Since the size of the nanoparticles is essential in reducing the thermal conductivity, great improvements in the figure of merit can be expected for the nanostructured Bi(Pb)-Sr-Co-O thin films.
	TO cite this article:Yan Guoying,Chen Shanshan,Wang Shufang, et al. High temperature thermoelectric properties of nanostructured (Bi,Pb)-Sr-Co-O thin films[OL].[13 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4503144


	8. Effects of the AlN layer thickness of composition-graded AlxGa1-xN/AlN buffer layer on the properties of GaN epilayers grown on silicon substrates
	DAI Jiangnan,FANG Yanyan,XIONG Hui,TIAN Yu,ZHANG Jin,CHEN Changqing
	Physics 24 January 2011
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	Abstract:In this paper, Gallium nitride (GaN) epitaxial layer was grown by metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates with composition-graded AlxGa1-xN /high-temperature aluminum nitride (HT-AlN) as buffer layer. The effects of the HT-AlN buffer layer thickness on the morphological, structural and optical properties of the GaN layers were investigated by varying the thickness from 50 to 450 nm. Optical Microscopy (OM), Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) and Raman scattering were employed to characterize the samples. It is found that when the thickness of HT-AlN buffer is 300 nm, high quality and crack-free GaN epilayers up to 1.2 μm with X-ray rocking curve(XRC) FWHM values of 0.20 and 0.41 of (002) and (102) respectively can be obtained. From the asymmetric reciprocal space mappings and Raman spectrum analysis, it can be concluded that the lowest tensile stress is achieved in the GaN epitaxial films with 300 nm AlN buffer layer.
	TO cite this article:DAI Jiangnan,FANG Yanyan,XIONG Hui, et al. Effects of the AlN layer thickness of composition-graded AlxGa1-xN/AlN buffer layer on the properties of GaN epilayers grown on silicon substrates[OL].[24 January 2011] http://en.paper.edu.cn/en_releasepaper/content/4408741


	9. Realization of room temperature electroluminescence from the heterojunction device with n-ZnO/p-GaN structure
	TianPeng Yang,HuiChao Zhu,JiMing Bian,Jingchang Sun,Xin Dong,Baolin Zhang,Hongwei Liang,Xiangping Li,yongguo Cui,Guotong Du
	Physics 06 March 2008
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	Abstract:The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg doped p-type GaN layer with a hole concentration of ~1017 cm-3 and a unintentionally doped n-type ZnO layer with an electron concentration of ~1018 cm-3. A distinct blue-violet electroluminescence with a dominant emission peak centered at ~415nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.
	TO cite this article:TianPeng Yang,HuiChao Zhu,JiMing Bian, et al. Realization of room temperature electroluminescence from the heterojunction device with n-ZnO/p-GaN structure[OL].[ 6 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19077

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