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	1. Microstructure and Optical Properties of Nanocrystalline GaN Embedded in Silica Matrix
	Hailin Qiu,Chuanbao Cao,Dazhi Wang,Hesun Zhu
	Chemistry 22 December 2005
	Show/Hide Abstract \| Cite this paper︱Full-text: PDF (0 B)

	Abstract:Monodispersed and high density nanocrystalline GaN particles were in-situ synthesized in silica xerogel by a sol-gel method. Microstructure and morphology analyses reveal that as-prepared GaN crystallites were hexagonal phase. It well dispersed in silica matrix with uniformed size, and its average size varied from 3nm to 8nm with prolonging the nitridation period and enhancing the reaction temperature. The FTIR spectrum shows a Ga-N bond stretch present at 600cm-1, which indicated that the element Ga atom dominantly existed with Ga-N bond in the samples. Room temperature photoluminescence (PL) exhibited a non-size-dependence near band-edge emission of GaN at 390 nm, and another PL emission peak about 565, 570, 580nm with different intensity in three samples respectively. The possible reason for the PL results was proposed.
	TO cite this article:Hailin Qiu,Chuanbao Cao,Dazhi Wang, et al. Microstructure and Optical Properties of Nanocrystalline GaN Embedded in Silica Matrix[OL].[22 December 2005] http://en.paper.edu.cn/en_releasepaper/content/4580

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