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	1. Fabrication and characterization of Ag-implantation modificated TiO2 films followed with thermal annealing
	Xiao Xiangheng,Xu Jinxia,Ren Feng,Cai Guangxu
	Nuclear Science and Technology 12 January 2013
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	Abstract:TiO2 thin films fabricated by direct-current (DC) reactive magnetron sputtering were implanted with Ag ions at 30 kV to fluences of 1×1016, 3×1016 and 5×1016 ions/cm2, and subsequently annealed at 500 C for 2 h under Ar ambient. Cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy studies showed that the implanted Ag ions were incorporated in TiO2 to form Ag2O after thermal annealing. The Ag-implanted TiO2 film with fluence of 3×1016 ions/cm2 after an annealing showed improved photocatalytic efficiency comparing to TiO2 film. When the implantation fluence increased to the 5×1016 ions/cm2, the sample showed poorer phtotcatalytic efficiency. These results indicate that there exists an optimum Ag ions implantation fluence. The photocatalytic behavior can be explained by the effect of Ag+ on the physicochemical properties in terms of electronic structures and film texture.
	TO cite this article:Xiao Xiangheng,Xu Jinxia,Ren Feng, et al. Fabrication and characterization of Ag-implantation modificated TiO2 films followed with thermal annealing[OL].[12 January 2013] http://en.paper.edu.cn/en_releasepaper/content/4514747


	2. Tuning porous silica films by various surfactants and loading: A study of positron annihilation Doppler broadening based on a slow positron beam
	XIONG Bangyun,MAO Wenfeng,HE Chunqing
	Nuclear Science and Technology 25 October 2012
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	Abstract:Porous silica films were synthesized via a sol-gel method using a nonionic amphiphilic triblock copolymer (F127) and a cationic surfactant (CTAB) as the structural templates with varying weight ratio. Positron annihilation Doppler broadening spectroscopy based on a slow positron beam was used to study the prepared silica films. For the porous silica films, the S parameter increased gradually with increasing the surfactant loading, which showed that larger pores were introduced in the silica films with more porogen. Distinct difference was observed for the W parameter of the same silica film templated by CTAB after rotating it by 90 around the positron beam axis, indicative of ordered tubal pores aligning along the film surface.
	TO cite this article:XIONG Bangyun,MAO Wenfeng,HE Chunqing. Tuning porous silica films by various surfactants and loading: A study of positron annihilation Doppler broadening based on a slow positron beam[OL].[25 October 2012] http://en.paper.edu.cn/en_releasepaper/content/4492969


	3. Evaluation on correction factor for in-line X-ray phase contrast Computed Tomography
	Jin MingLi ,Huang Zhifeng ,Zhang Li ,Yin Hongxia ,Liu Yunfu,Wang Zhenchang ,Xiao Tiqiao
	Nuclear Science and Technology 06 March 2011
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	Abstract:X-ray in-line phase contrast computed tomography (CT) is an effective nondestructive tool, providing 3D distribution of the refractive index of weakly absorbing low-Z object with high resolution and image contrast, especially with high-brilliance third-generation synchrotron radiation sources. Modified Bronnikov's algorithm (MBA), one of the in-line phase contrast CT reconstruction algorithms, can reconstruct the refractive index distribution of a pure phase object with a single computed tomographic data set. The key idea of the MBA is to use a correction factor in the filter function to stabilize the behavior at low frequencies. In this paper, we evaluate the influences of the correction factor to the final reconstruction results of the absorption-phase-mixed objects with analytical simulation and actual experiments. The limitations of the MBA are discussed finally..
	TO cite this article:Jin MingLi ,Huang Zhifeng ,Zhang Li , et al. Evaluation on correction factor for in-line X-ray phase contrast Computed Tomography[OL].[ 6 March 2011] http://en.paper.edu.cn/en_releasepaper/content/4413752


	4. Numerical simulation for space charge dominated beam transport
	Lü Jian-Qin
	Nuclear Science and Technology 02 February 2009
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	Abstract:To simulate the intense bunched beam transport, a computer program LEADS-3D has been developed. The particle trajectories are analyzed with the Lie algebraic method. Third order approximation of the trajectory solutions is made with space charge forces off, and second order approximation is made with space charge forces on. The particle distribution in the 3-D ellipsoid is uniform or Gaussian. Most of the conventional beam optics elements are incorporated in the code. The optimization procedures are provided to fit the beam lines to satisfy the given optical conditions.
	TO cite this article:Lü Jian-Qin. Numerical simulation for space charge dominated beam transport[OL].[ 2 February 2009] http://en.paper.edu.cn/en_releasepaper/content/28359


	5. Deposition of Potential Energy in Solid by the Interaction of Slow Highly Charged Ions with Solid Surface
	Guixia Yang,Tieshan Wang,Shengjin Liu,Yuncheng Han,Liang Chen,Xiang Yang,Xiuyu Yang
	Nuclear Science and Technology 04 November 2008
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	Abstract:The defects on a highly oriented pyrolytic graphite (HOPG) surface induced by slow highly charged Arq+ ions with impact energy of 20-2000qeV are investigated with scanning probe microscopy (SPM). The average lateral size and height of nano-dots were obtained. Their dependency on the potential and kinetic energy of HCIs were discussed. A Coulomb Explosion (CE) model was applied to analysis nano-defect effect. According to the calculated results, the ratio of the potential energy of HCI deposited on the solid surface can be known. Besides, formation mechanism and height of the nano-dots are discussed.
	TO cite this article:Guixia Yang,Tieshan Wang,Shengjin Liu, et al. Deposition of Potential Energy in Solid by the Interaction of Slow Highly Charged Ions with Solid Surface[OL].[ 4 November 2008] http://en.paper.edu.cn/en_releasepaper/content/25380


	6. Experimental study on heavy ion single event effects in SOI SRAMs
	Li Yonghong,He Chaohui,Zhao Fazhan, Guo Tianlei,Liu Gang,Han Zhengsheng,Guo Gang,Liu Jiancheng, Teng rui, Hui Ning,Chen Quan
	Nuclear Science and Technology 03 September 2008
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	Abstract:64K silicon-on-insulator (SOI) SRAMs were exposed to different heavy ions, Cu, Br, I, Kr. Experiment results show that the heavy ion single event upset(SEU) threshold Linear Energy Transfer (LET) in the 64K SOI SRAMs is about 71.8 MeV.cm2/mg. According to the experimental results, the single-event upset rate（SEUR）in space orbits are calculated and they are at the order of 10-13 upset/(day.bit) .
	TO cite this article:Li Yonghong,He Chaohui,Zhao Fazhan, et al. Experimental study on heavy ion single event effects in SOI SRAMs[OL].[ 3 September 2008] http://en.paper.edu.cn/en_releasepaper/content/23714

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