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1. Experimental study on heavy ion single event effects in SOI SRAMs | |||
Li Yonghong,He Chaohui,Zhao Fazhan, Guo Tianlei,Liu Gang,Han Zhengsheng,Guo Gang,Liu Jiancheng, Teng rui, Hui Ning,Chen Quan | |||
Nuclear Science and Technology 03 September 2008 | |||
Show/Hide Abstract | Cite this paper︱Full-text: PDF (0 B) | |||
Abstract:64K silicon-on-insulator (SOI) SRAMs were exposed to different heavy ions, Cu, Br, I, Kr. Experiment results show that the heavy ion single event upset(SEU) threshold Linear Energy Transfer (LET) in the 64K SOI SRAMs is about 71.8 MeV.cm2/mg. According to the experimental results, the single-event upset rate(SEUR)in space orbits are calculated and they are at the order of 10-13 upset/(day.bit) . | |||
TO cite this article:Li Yonghong,He Chaohui,Zhao Fazhan, et al. Experimental study on heavy ion single event effects in SOI SRAMs[OL].[ 3 September 2008] http://en.paper.edu.cn/en_releasepaper/content/23714 |
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