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	1. Fabrication of polymer silver conductor using inkjet printing
	Wu Songping
	Electrics, Communication and Autocontrol Technology 24 December 2008
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	Abstract:In this paper, silver powders with a uniform particle size of 0.2~0.4 µm and excellent dispersibility were applied to make conductive ink for inkjet printing process. The thermal behaviors of silver particles sintered at different temperature were investigated by XRD pattern. It was found out that, during the sintering process, not only particle size increased but also the crystal grains in the particles grew. A drop-on-demand (DOD) inkjet printing system was employed to print conductor using as-mentioned silver particles suspended in terpineol / polyketone (PK) system as conductive material. When the value of WPK/W silver was 5%, the resistivity of conductor was low to 2.0 µΩ•cm, and then it increases as the ratio increasing. Generally speaking, with increasing weight ratio of PK, the adhesion strength of conductor increases. The microstructures of silver conductor were analyzed by SEM, and the results showed that the densification of conductor and long-range inter-particle connectivity give the silver conductor a low resistivity. The adhesiveness effect from PK resin gives conductor the high adhesion strength.
	TO cite this article:Wu Songping. Fabrication of polymer silver conductor using inkjet printing [OL].[24 December 2008] http://en.paper.edu.cn/en_releasepaper/content/26922


	2. Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT
	Hong Yang,Ning Sa,Jinfeng Kang
	Electrics, Communication and Autocontrol Technology 31 December 2007
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	Abstract:In this paper, ultra thin CVD HfO2-gated nMOS capacitors (nMOSCs) with EOT~0.9 nm were fabricated. The time-dependent dielectric breakdown (TDDB) characteristics of the 0.9 nm HfO2 gate stack were studied under constant voltage stress (CVS). Area scaling consistent with Weibull statistics as in SiO2 was observed in the gate stack, demonstrating that intrinsic effects dominate time-dependent dielectric breakdown (TDDB) characteristics of the ultra thin HfN/HfO2 gate stack. For the first time, different TDDB characteristics under gate injection with low and high CVS were demonstrated in the sub-1 nm EOT HfO2 gated devices. The results show that interfacial layer initiated breakdown dominates the TDDB under low CVS and HfO2 bulk initiated breakdown under high CVS. A new breakdown model is proposed to explain the new demonstrated TDDB characteristics.
	TO cite this article:Hong Yang,Ning Sa,Jinfeng Kang. Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT[OL].[31 December 2007] http://en.paper.edu.cn/en_releasepaper/content/17620


	3. Interfacial Reaction Induced PBTI and NBTI Characteristics in the HfN/HfO2 Gate Stacks with Low Preexisting Trap Density
	Sa Ning ,Yang Hong ,Kang Jinfeng
	Electrics, Communication and Autocontrol Technology 24 December 2007
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	Abstract:In this paper, HfN/HfO2 gated n-FETs and p-FETs with low preexisting traps density in the HfN/HfO2 gate stacks were fabricated by using a high temperature process. The positive and negative bias temperature instability (PBTI and NBTI) characteristics in the HfN/HfO2 gate stacks are studied systematically. The characteristics of the Vt instability mainly caused by the stress-polarity instead of the substrate type -dependent are observed both in n-FETs and p-FETs. The negative threshold voltage (Vt) shifts, which can be well fitted by a generalized reaction-diffusion (R-D) model, are observed under both positive and negative bias temperature (NBT) stressing. The mechanisms of the interfacial reactions induced by the injected electrons or holes from substrates are proposed to explain the observed PBTI and NBTI characteristics: under PBT stressing, the injected electrons from the substrates induce the breaking of the Si-O bonds in the interfacial layer between HfO2 layer and Si substrates, which causes the PBTI characteristics; under NBT stressing, the injected holes from the substrate induce the breaking of the Si-H bonds at Si interface, which causes the NBTI characteristics. The consistency between the measured data and the ones predicted by the mechanisms confirms the validity of the interfacial reactions mechanisms.
	TO cite this article:Sa Ning ,Yang Hong ,Kang Jinfeng . Interfacial Reaction Induced PBTI and NBTI Characteristics in the HfN/HfO2 Gate Stacks with Low Preexisting Trap Density[OL].[24 December 2007] http://en.paper.edu.cn/en_releasepaper/content/17305


	4. Principle of I2C Bus and its Application in IC design
	Yifan Li,Fei Mo
	Electrics, Communication and Autocontrol Technology 19 January 2007
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	Abstract:Compared with the parallel bus,I2C bus do require less wiring, fewer IC connection pins, and the less number of traces required on printed circuit boards. So there are many applications of I2C bus in IC design. In this paper,the principle and the operation of I2C bus will be introduced. Also the design of I2C slave in FPGA and I2C master in PC which is simulated by the parallel ports will be discussed.
	TO cite this article:Yifan Li,Fei Mo. Principle of I2C Bus and its Application in IC design[OL].[19 January 2007] http://en.paper.edu.cn/en_releasepaper/content/10798


	5. Diamond-like carbon deposition using microwave plasma chemical vapor deposition
	Lai Xiuqiong ,Chen Junfang ,Silie Fu,Wei Li,Maoping Zhang,Lei Shi, Chunlin Yang
	Electrics, Communication and Autocontrol Technology 07 November 2006
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	Abstract:The spatial plasma density distribution in the reaction chamber of the quartz tube microwave plasma apparatus is diagnosed at p = 1.20 kpa, Pw = 440W by a Langmuir probe, obtaining the biggest plasma density 1.05×1012/cm3. Also, the plasma density under different discharge gas pressure and power is diagnosed. Diamond-like carbon films are achieved at p = 6.8kPa, Pw = 680W with CH4 flow rate being 6ml/min and H2 flow rate being 200ml/min and detected by AFM, Raman spectroscopy instrument and profiler.
	TO cite this article:Lai Xiuqiong ,Chen Junfang ,Silie Fu, et al. Diamond-like carbon deposition using microwave plasma chemical vapor deposition[OL].[ 7 November 2006] http://en.paper.edu.cn/en_releasepaper/content/9343


	6. Parallel valveless micropump with two flexible diaphragms
	Su Yufeng,Chen Wenyuan,Cui Feng
	Electrics, Communication and Autocontrol Technology 05 January 2005
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	Abstract:his paper presents a parallel dynamic passive valveless micropump, which consists of three layers—valve, diaphragm and electromagnetic coil. The valve is wetly etched in a silicon wafer, the diaphragm is a PDMS (polydimethyl siloxane) film spun on a silicon wafer with embedded permanent magnet posts, and the coil is electroplated on a silicon substrate. Under the actuation of the magnetic field of the coil, the flexible diaphragm can be displaced upwards and downwards. After analyzing magnetic and mechanical characteristic of the flexible membrane and direction-dependence of the nozzle, this paper designed a micropump. And the relative length (L/d) of the micropump’s nozzle is 4.An 7×7 array of permanent magnetic posts is embedded in the PDMS film. The two diaphragms work in an anti-step mode, which can relieve the liquid shock and increase the discharge of the micropump. ANSYS○R and Matlab○R are adopted to analyze the actuation effect of the coil and the flow characteristic of the mi
	TO cite this article:Su Yufeng,Chen Wenyuan,Cui Feng. Parallel valveless micropump with two flexible diaphragms[OL].[ 5 January 2005] http://en.paper.edu.cn/en_releasepaper/content/1420

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