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	1. Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process
	Yuling Liu,Xinhuan Niu,Tan Baimei,Wang Shengli
	Electrics, Communication and Autocontrol Technology 07 January 2009
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	Abstract:The kinetics process and control process of chemical mechanical high precision finishing for material surface were studied in this paper. According to the experiments, the seven kinetics process for chemical mechanical polishing(CMP) was generalized. Through investigating the CMP process of ULSI silicon substrate, we found that chemical process was the CMP control process under the same mechanical action condition, which was caused by temperature. Such key factor of influencing chemical reactions was effectively settled, which was advantageous to improving other materials CMP removal rate.
	TO cite this article:Yuling Liu,Xinhuan Niu,Tan Baimei, et al. Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process[OL].[ 7 January 2009] http://en.paper.edu.cn/en_releasepaper/content/27423


	2. Control technique of Sapphire roughness in CMP processing
	Yuling Liu,Baimei Tan,Niu Xinhuan,Zhao Haitao
	Electrics, Communication and Autocontrol Technology 06 January 2009
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	Abstract:Sapphire is the main substrate for the third generation semiconductor materials-GaN. The surface quality directly affects device performance. In this paper, chemical mechanical polishing (CMP) of sapphire substrate is studied, several factors which influence the CMP quality are analyzed, and the mechanism of CMP model is discussed. Small size (20~30nm) and low dispersion silica sol is used as abrasive, which can avoid scratches caused by abrasive granules with uneven diameter. The complex surfactant of the slurry can reduce the surface tension and accelerate the mass transfer of the reactant and reaction product effectively, which can accelerate the reaction and lead to better concave-convex selectivity and low roughness. We also find that the mass transfer is related with the temperature, the higher the temperature, the faster the transmission speed. So the removal rate is higher. By controlling the polishing temperature, the roughness can reach 0.2nm and the perfect sapphire surface is achieved.
	TO cite this article:Yuling Liu,Baimei Tan,Niu Xinhuan, et al. Control technique of Sapphire roughness in CMP processing[OL].[ 6 January 2009] http://en.paper.edu.cn/en_releasepaper/content/27391

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	3. Evolution of photocurrent during coadsorption of Cs and O on GaAs (100)
	Zou Jijun ,Chang Benkang
	Electrics, Communication and Autocontrol Technology 03 January 2009
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	Abstract:The photocurrent and spectral response curves of gallium arsenide (GaAs) photocathodes have been obtained by a multi-information measurement system, and the evolution of the photocurrent has been investigated as a function of the Cs:O flux ratio. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent being different for different samples. These differences are analyzed in this study, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.
	TO cite this article:Zou Jijun ,Chang Benkang . Evolution of photocurrent during coadsorption of Cs and O on GaAs (100) [OL].[ 3 January 2009] http://en.paper.edu.cn/en_releasepaper/content/27202


	4. Modular Fault Diagnosis for the Closed-Loop Operational Amplifier Based Analog Circuits
	Hu Mei,Wang Hong,Yang Shiyuan
	Electrics, Communication and Autocontrol Technology 05 September 2008
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	Abstract:This paper describes a dictionary method based on slope fault feature for hard and soft faults diagnosis of modular analog circuit. In complicated circuit when the closed-loop operational amplifier (CLOA) is used as a basic building block, the circuit can be divided into several modules based on the CLOA, and then extract the unified slope fault feature of each module to establish fault dictionary, which can diagnose hard and soft faults of all the components and the OA of the corresponding module. Finally, experiments are demonstrated to validate the efficiency of the proposed approach: the coverage of hard and soft faults of OA is 64.4% and 86.4% respectively, and the fault coverage of passive components is 100%.
	TO cite this article:Hu Mei,Wang Hong,Yang Shiyuan. Modular Fault Diagnosis for the Closed-Loop Operational Amplifier Based Analog Circuits[OL].[ 5 September 2008] http://en.paper.edu.cn/en_releasepaper/content/23814


	5. Physics-based Modeling for Si CMOS On-Chip Spiral Inductors using Characteristic functions
	Wu Zhongjie,Yu Tian,Yufeng Zhu,Nan Jiang,Yusong Chi,Huang Fengyi
	Electrics, Communication and Autocontrol Technology 14 April 2008
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	Abstract:We present an extended review on the modeling of silicon CMOS on-chip spiral inductors based on S-parameter measurement. A series of equivalent circuits including different number of n-π structure with both symmetric and asymmetric geometries have been studied. The parameter extraction is carried out using a set of characteristic functions derived from the equivalent circuit without iterative optimization. As verified by a series of inductors fabricated with a 0.18 μm CMOS process, a good agreement between the measured and simulated data over a wide frequency range has been obtained. The characteristic-function approach can alleviate the potential problem of multiple solutions pertaining to conventional numerical method based on iteration optimization.
	TO cite this article:Wu Zhongjie,Yu Tian,Yufeng Zhu, et al. Physics-based Modeling for Si CMOS On-Chip Spiral Inductors using Characteristic functions[OL].[14 April 2008] http://en.paper.edu.cn/en_releasepaper/content/20462


	6. Design of LNA and improved active dual balanced mixer for 802.11a WLAN
	Wu Zhongjie,Zhao Liang,Zhu Yufeng,Shen Yi,Huang Fengyi
	Electrics, Communication and Autocontrol Technology 14 April 2008
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	Abstract:This paper represents a simple prescription of LNA and improved new active dual balanced mixer for 802.11a WLAN with 0.18um CMOS technology. The conversion voltage gain of the LNA achieves 14.8dB, S11 is -20.8dB, S22 is -23.1dB and noise figure is 1.38dB, as shown in the simulation results with 1.8 V supply voltage at 5.8GHz, respectively. The power dissipation is 26.3mW. The die size of the LNA is 0.9mm0.67mm. The RF, LO and IF frequency applied to the mixer are 5.8 GHz, 4.6 GHz and 1.2 GHz, respectively. This mixer achieves a conversion gain of -2.4dB, as well as a single-sideband noise figure (SSB NF), 1dB compression point, third-order input intercept point(IIP3) and power consumption of 12.1dB, 3.68dBm, 12.78dBm and 22.3mW at 5.8GHz, respectively. The die size of the mixer is 1.4mm1.1mm.
	TO cite this article:Wu Zhongjie,Zhao Liang,Zhu Yufeng, et al. Design of LNA and improved active dual balanced mixer for 802.11a WLAN[OL].[14 April 2008] http://en.paper.edu.cn/en_releasepaper/content/20458


	7. ESD Protection for HDMI Interfaces
	Liu Xiaohao,Yang Jie
	Electrics, Communication and Autocontrol Technology 24 March 2008
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	Abstract:The HDMI 1.3 specification supports the demand of future HD display devices for higher resolution and higher frame rates with a color depth up to 48-bit by doubling bandwidth from 165 MHz (4.95 Gbps) to 340 MHz (10.2 Gbps) of the previous HDMI 1.2 specification. The hot-plugging capability of HDMI ports makes ESD protection a must. In this paper, various ESD protection options are investigated, and a fully-integrated interface IC providing highest ESD- and back drive protection as well as the required level shifting for the I睠, CEC and hot-plug lines is presented.
	TO cite this article:Liu Xiaohao,Yang Jie. ESD Protection for HDMI Interfaces[OL].[24 March 2008] http://en.paper.edu.cn/en_releasepaper/content/19646


	8. P-type ZnO Conversion through Gold Alloy Method
	Zhang Jingwen,Wang Hongbo,Hou Xun
	Electrics, Communication and Autocontrol Technology 29 November 2006
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	Abstract:ZnO films were grown on Sapphire and n-type Silicon, and then deposited a gold film in some areas. After heat treatments in the air through gold alloy technics, they were employed to some electrical measurements. After treatment at the temperature of 850°C, ZnO, grown on sapphire and under gold layer, displayed super high resistivity. It seemed that the ZnO, grown on n-Si and under gold layer, displayed p-type conductivity, for diode-like I-V rectifying characteristics were observed between it and n-Si, and the ZnO layer, which was not deposited gold film. During the course of I-V characteristics measurement, the sample, grown on the n-Si and post treated at 750°C, appeared overflow twice, and then was observed stable rectifying characteristic. But the sample post treated at 650°C and lower temperature, was not observed rectifying characteristic. Farther experiment researches require to carried out.
	TO cite this article:Zhang Jingwen,Wang Hongbo,Hou Xun. P-type ZnO Conversion through Gold Alloy Method[OL].[29 November 2006] http://en.paper.edu.cn/en_releasepaper/content/10023


	9. Optical Waveguide Characterization of MgZnO/ZnO Single Quantum Well
	Bian Xuming ,Zhang Jingwen
	Electrics, Communication and Autocontrol Technology 27 November 2006
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	Abstract:In order to accurately model and design MgZnO/ZnO heterostructure optoelectronic devices, a precise knowledge of the fundamental optical properties for ZnO and its alloys is important. However, few studies have reported on the optical waveguide characterization. In this letter, optical waveguide characterization of MgZnO/ZnO quantum well was preliminary studied, and optical confinement factor Г of the strained active region as well as the intensity distribution of the quantum well were figured out. From the results obtained above, this paper describes an optimal design for the molar concentration of Mg in the waveguide region and restrict region as well as thickness of the strained active region, waveguide layer, confined layer.
	TO cite this article:Bian Xuming ,Zhang Jingwen . Optical Waveguide Characterization of MgZnO/ZnO Single Quantum Well[OL].[27 November 2006] http://en.paper.edu.cn/en_releasepaper/content/9909


	10. The effect of RTP pre-annealing on the precipitation behavior and electrical property of copper in CZ silicon
	Wang Weiyan ,Yang Deren
	Electrics, Communication and Autocontrol Technology 26 October 2006
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	Abstract:The effect of RTP pre-annealing with different atmospheres and temperatures on the precipitation behavior and electrical property of copper, was investigated by Scanning Infrared Microscopy (SIRM), Electrical beam induced current (EBIC) and Microwave photo conductance decay (m-PCD). Compared to the situation without RTP pre-annealing, RTP pre-annealing in Ar atmosphere at 1200℃ or 1100℃ would seldom influence copper precipitates’ size or density, however the recombination intensity increased and the effective lifetime decreased. Whereas RTP pre-annealing in O2 atmosphere at 1200℃ or 1100℃ would prevent the copper precipitation, copper tended to form large copper precipitate colonies, however the effective lifetime decreased also. It means vacancies or interstitial silicon atoms produced during RTP pre-annealing have effect on the precipitation behavior or electrical property of copper. Moreover, the samples pre-annealing at 1200℃ had lower lifetime than that at 1100℃, and pre-annealing in Ar atmosphere had lower lifetime than that in O2 atmosphere.
	TO cite this article:Wang Weiyan ,Yang Deren . The effect of RTP pre-annealing on the precipitation behavior and electrical property of copper in CZ silicon[OL].[26 October 2006] http://en.paper.edu.cn/en_releasepaper/content/9024

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