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1. Quantum Transport Simulations of α-In2Se3 Antiferroelectric Tunnel Junctions | |||
Zhang Lingxue,Zhang Jiaxin,Sun Yuxuan,Li Wei,Quhe Ruge | |||
Physics 08 March 2024 | |||
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Abstract:Due to semiconductor characteristics and non-volatile ferroelectricity, two-dimensional (2D) In2Se3 are considered as potential candidates for next-generation storage and computing devices. Based on first principles calculations, we designed antiferroelectric tunnel junctions (AFTJs) using α-In2Se3 as channels. The tunneling barrier height is controlled by the antiferroelectric to ferroelectric (AFE-FE) phase transition of the channel. A maximum current ratio up to 426 is predicted between the AFE and FE phases, enabling the two distinct memory states. By constructing two AFTJs into a calculation unit, the total current can either be fully turned on/off or function as XNOR logic with bias as inputs. Our research provides a new approach to implementing integrated storage and computing devices, making it possible for efficient data centric applications in the era of big data. | |||
TO cite this article:Zhang Lingxue,Zhang Jiaxin,Sun Yuxuan, et al. Quantum Transport Simulations of α-In2Se3 Antiferroelectric Tunnel Junctions[OL].[ 8 March 2024] http://en.paper.edu.cn/en_releasepaper/content/4762525 |
2. Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage | |||
SHU Haiyan,HE Chaotao,ZHANG Xingwen,LI Shichang,CHEN Peng | |||
Physics 28 November 2023 | |||
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Abstract:In this paper,the resistive switching characteristics of Ag/Fe2O3/MoS2/Ag multilayer film deposited on ITO by magnetron sputtering are investigated.The Ag/Fe2O3/MoS2/Ag device exhibits superior resistive switching behavior compared to the device without Fe2O3 layer due to the positive effect of oxygen vacancies in Fe2O3 on the formation of conducting filaments. The resistive switching ratio of the device is close to 7.0 × 105. The current value of the device drops sharply at 0.12 V when the voltage is swept forward, and the device switches from HRS back to LRS at -0.28 V when a voltage of opposite polarity is applied.The I-V curves of the device are fitted in double logarithmic coordinates, and it is found that the device is controlled by an ohmic conduction model in the low resistance state and two conduction models in the high resistance state: in the low bias region, which exhibits ohmic conduction, and at higher voltages, which is controlled by the SCLC conduction model. Such a resistive switching characteristic with very low switching voltage and high resistance ratio is of particular importance in the application of resistive stochastic storage. | |||
TO cite this article:SHU Haiyan,HE Chaotao,ZHANG Xingwen, et al. Resistance switching characteristic of Ag/Fe2O3/MoS2/Ag with very low switching voltage[OL].[28 November 2023] http://en.paper.edu.cn/en_releasepaper/content/4761573 |
3. Quantum Transport Simulations of a Proposed Logic In-Memory Device Based on Bipolar Magnetic Semiconductor | |||
Ke Yunzhe,Yin Guoxue,Zhang Lingxue,Li Wei,Quhe Ruge | |||
Physics 20 March 2023 | |||
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Abstract:To overcome the memory wall based on the von Neumann architecture, in-memory computing has been intensively studied as a potential solution. Recently, a new type of spintronic material, namely bipolar magnetic semiconductors (BMSs), draw much attention because of its opposite spin-polarized valence and conduction bands and thus facilitates electrically tunable spin transport. Here, we propose a novel logic-in-memory device with a traditional field effect transistor (FET) configuration by making use of the ferromagnetic and semiconducting features of BMSs simultaneously. Two represented BMSs (2H-VS2 and semihydrogenated graphene) are selected as the channel of FETs and the transport properties of these devices have been investigated by using ab initio quantum transport simulations. The spin polarization of the current reaches up to 98%, enabling the device to provide an ideal spin polarization signal. The distinct electronic structures under the two magnetic states and the electrically tunable spin polarization allow the devices to perform logic operations directly in situ. Two-input NAND and OR logic and non-volatile NOR logic gates can be realized with one and two BMS FETs, respectively, efficiently decreasing the integration density of logical circuits. This work provides a new route to realize fused storage and computing functions in a single transistor. | |||
TO cite this article:Ke Yunzhe,Yin Guoxue,Zhang Lingxue, et al. Quantum Transport Simulations of a Proposed Logic In-Memory Device Based on Bipolar Magnetic Semiconductor[OL].[20 March 2023] http://en.paper.edu.cn/en_releasepaper/content/4759823 |
4. High intrinsic dielectric properties for aluminates | |||
LIU Yaoyao,LI Qiuju | |||
Physics 27 March 2019 | |||
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Abstract:The dielectric properties of LaAlO3, YAlO3, SrLaAlO4, and NdCaAlO4 single crystals were examined in the temperature range of -180-800℃ and the frequency range of 100 Hz-5 MHz. A thermally activated relaxation resulting from the hopping motions of oxygen vacancies was found in these aluminates. Impedance analysis revealed that LaAlO3, YAlO3, and NdCaAlO4 show intrinsic dielectric properties in the temperature range below 200℃. While for SrLaAlO4, whose intrinsic dielectric properties can be maintained up to a higher temperature of 400℃. The aluminates show close intrinsic dielectric constant of ~20 with low dielectric loss in their intrinsic range indicating that these materials are very encouraging for gate dielectrics. | |||
TO cite this article:LIU Yaoyao,LI Qiuju. High intrinsic dielectric properties for aluminates[OL].[27 March 2019] http://en.paper.edu.cn/en_releasepaper/content/4748042 |
5. Control synthesis and Thermoelectric Characterization of Sb2Te3 One-Dimensional Nanostructures Using Te Nanorods as Templates | |||
ZHAO Haoting,ZHU Hangtian,LI Guannan | |||
Physics 30 June 2018 | |||
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Abstract:In this paper, we have demonstrated a two-step method to synthesize Sb2Te3 nanorods by using Te nanorods as the self-sacrificed templates. Impurity-free poly-crystalline Sb2Te3 nanorods have been synthesized on a large scale. Strings of Sb2Te3 nanoplatelets have been also synthesized by adjusting the reaction condition for Te nanorod precursor,which may be attributed to the nucleation and epitaxial growth of the Sb2Te3 nanoplatelets on the surface of the templates by the reaction of unconsumed K2TeO3 with Sb3+ ions in the solution. The thermoelectric transport properties of the pressed Sb2Te3 nanorods sample were measured. Enhanced seebeck coefficient and reduced thermal conductivity were observed. The high resistivity of the sample may be ascribed to unoptimized interconnections. | |||
TO cite this article:ZHAO Haoting,ZHU Hangtian,LI Guannan. Control synthesis and Thermoelectric Characterization of Sb2Te3 One-Dimensional Nanostructures Using Te Nanorods as Templates[OL].[30 June 2018] http://en.paper.edu.cn/en_releasepaper/content/4745541 |
6. Structural, stability and electronic properties of BinPm clusters | |||
Wanting Shen,Dan Liang,Liyuan Wu,Pengfei Lu | |||
Physics 12 November 2017 | |||
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Abstract:An in-depth investigation is performed on stability mechanisms and electronic properties of III-V semiconductor vapor phases clusters. First principles electronic structure calculations of CAM-B3LYP are performed on neutral BinPm (n+m ≤ 14) clusters. The geometrical evolution of all stable structures remain amorphous as the clusters size increases. Binding energies, energy gains and HOMO-LUMO gaps confirm that all four-atom structures of BinPm clusters have more stable optical properties. Orbitals composition of the stable clusters are analyzed. Our calculations will contribute to the study of diluted bismuth alloys and compounds. | |||
TO cite this article:Wanting Shen,Dan Liang,Liyuan Wu, et al. Structural, stability and electronic properties of BinPm clusters[OL].[12 November 2017] http://en.paper.edu.cn/en_releasepaper/content/4741869 |
7. Molecular Beam Epitaxy Growth of Tetragonal FeS Film on SrTiO3(001) Substrate | |||
ZHAO Kun,LIN Haicheng,HUANG Wantong,HU Xiaopeng,CHEN Xi,Xue Qi-Kun,JI Shuai-Hua | |||
Physics 23 May 2017 | |||
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Abstract:We report the successful growth of tetragonal FeS film with one or two unit cell (UC) thickness on SrTiO3(001) substrate by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in single UC FeS, while it has been significantly reduced in double UC thick film due to the lattice relaxation. The scanning tunneling spectra on the surface of FeS thin film reveal the electronic doping effect of single UC FeS from the substrate. In addition, at the Fermi level, the energy gaps of approximate 1.5 meV are observed in films of both thickness at 4.6 K and below. The absence of coherence peaks of gap spectra may be related to the preformed Cooper-pairs without phase coherence. | |||
TO cite this article:ZHAO Kun,LIN Haicheng,HUANG Wantong, et al. Molecular Beam Epitaxy Growth of Tetragonal FeS Film on SrTiO3(001) Substrate[OL].[23 May 2017] http://en.paper.edu.cn/en_releasepaper/content/4735042 |
8. The electron transport modulated with phonon in graphene nanoribbons | |||
Yue-Yang Liu,Bo-Lin Li,Shi-Zhang Chen,Ke-Qiu Chen | |||
Physics 09 May 2017 | |||
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Abstract:We observe directly the lattice vibration and its multifold effect on electron/spin transport in zigzag graphene nanoribbons in simulation. Results show that the electron transport fluctuates greatly due to the incessant lattice vibration of the nanoribbons. More interestingly, the phonons behave like a double-edged sword that it boosts the conductance of symmetric zigzag nanoribbons (containing even number of zigzag chains along the width direction) while weakens the conductance of asymmetric nanoribbons. As a result, the spin filter effect that exists in perfect symmetric zigzag graphene nanoribbon is significantly weakened by phonons. Since phonons are usually inevitable in experiments, the research is very meaningful for guiding the realization of theoretical phenomena in experiments or explaining the mismatches between theoretical predictions and experimental results. | |||
TO cite this article:Yue-Yang Liu,Bo-Lin Li,Shi-Zhang Chen, et al. The electron transport modulated with phonon in graphene nanoribbons[OL].[ 9 May 2017] http://en.paper.edu.cn/en_releasepaper/content/4729361 |
9. Superconductivity in large spin-orbit coupled material IrTe2 | |||
Zhang Xi,Wang Jintian,Liu Yanzhao,Zheng wentian,Wang Jian | |||
Physics 05 May 2017 | |||
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Abstract:As a member of transition metal dichalcogenides, IrTe2 is expected to exhibit typical layered structure and show large spin-orbital coupling(SOC) due to the large atomic numbers of Ir and Te. We successfully fabricated high quality IrTe2 crystals, where superconductivity was detected by transport and diamagnetic measurements. Furthermore, linear magnetoresistance was observed over a wide range of magnetic field up to 15T without any sign of becoming saturated, which might originate from topological nontrivial state. Thus, IrTe2 could be a candidate of topological superconductors with simple element composition and crystal structure. | |||
TO cite this article:Zhang Xi,Wang Jintian,Liu Yanzhao, et al. Superconductivity in large spin-orbit coupled material IrTe2[OL].[ 5 May 2017] http://en.paper.edu.cn/en_releasepaper/content/4730995 |
10. Effects of contact geometry and nitrogen atoms on the electronic transport properties of Phenazine Compounds | |||
ZHAO Jingfen,ZOU Dongqing,LIU Desheng | |||
Physics 29 April 2017 | |||
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Abstract:By using the nonequilibrium Green's function formalism in combination with the density functional theory, we have studied the electronic transport properties of three phenazine derivatives which are linked to gold electrodes through thiol-gold bonds. We can see that the currents through the top configurations are remarkably larger than that of hollow ones. That is to say, the contact position does affect the electronic transport properties. We also find that the molecule devices exhibited negative differential resistance phenomenon when the metal-molecule contact model is top. The mechanisms are proposed for these phenomena. | |||
TO cite this article:ZHAO Jingfen,ZOU Dongqing,LIU Desheng. Effects of contact geometry and nitrogen atoms on the electronic transport properties of Phenazine Compounds [OL].[29 April 2017] http://en.paper.edu.cn/en_releasepaper/content/4725643 |
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