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1. Fabrication and Detection of Carbon Nanotube Gas Sensor Microelectrodes | |||
RAN Xiangtao,XU Hongmei,WANG Zuobin,WENG Zhankun,SONG Zhengxun,MI Weixun | |||
Electrics, Communication and Autocontrol Technology 25 December 2013 | |||
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Abstract:With the increasing needs for high-performance gas sensors in industrial production, environmental monitoring and home safety, the research on gas sensors is becoming more and more important. In this paper, the electric field intensity distribution simulation process of interdigital microelectrodes (IMEs) is discussed in detail to get the proper electrode structural parameters. The IMEs on the ITO surface with a minimum gap of about 4μm is achieved by lithography, which provides a reliable, low-cost manufacturing method. Sensitive components are made of the multi-walled carbon nanotubes modified materials. The electrochemical properties of the components are analyzed and characterized. The gas-sensing property of the sensor is respectively detected under both conditions of light presence and absence. The experiment result shows that the performance of the nano-modified sensor under the condition of light presence is obviously improved. | |||
TO cite this article:RAN Xiangtao,XU Hongmei,WANG Zuobin, et al. Fabrication and Detection of Carbon Nanotube Gas Sensor Microelectrodes[OL].[25 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4575209 |
2. Infrared light transport properties of nanostructure vanadium dioxide thin films across metal-insulator | |||
LIANG Jiran,LIU Xing,HU Ming,LI Na,WU Maijun | |||
Electrics, Communication and Autocontrol Technology 04 December 2013 | |||
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Abstract:A nano-structured Vanadium dioxide thin film has been fabricated through reactive magnetron sputtering followed thermal annealing. X-ray diffraction and scanning electron microscope were used to analysis the crystalline structure and morphology of annealed thin film, respectively. The infrared light transport properties of nano-structured vanadium dioxide thin film were characterized by transmittance determined by Fourier transform infrared spectrometry during phase transition. The results show that the onset temperature of transition increases with wavelength. The maximum transmittance shifts to longer wavelength as the phase changed from insulating phase to metallic phase. The transmittance at shorter wavelength exhibits an increasing at the beginning of metal-insulator transition. The infrared light transport properties are related to the interaction of infrared light and vanadium dioxide nano-grain during metal-insulator transition. | |||
TO cite this article:LIANG Jiran,LIU Xing,HU Ming, et al. Infrared light transport properties of nanostructure vanadium dioxide thin films across metal-insulator[OL].[ 4 December 2013] http://en.paper.edu.cn/en_releasepaper/content/4572629 |
3. Optical reflectance properties near isosbestic point of vanadium dioxide thin films fabricated by rapid thermal annealing oxidation vanadium metal thin film | |||
Liang Jiran,Li Na,Liu Xing,Hu Ming,Wu Maijun | |||
Electrics, Communication and Autocontrol Technology 20 November 2013 | |||
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Abstract:Vanadium dioxide thin films were fabricated by rapid thermal annealing vanadium thin films in oxygen atmosphere. The effects of annealing time on metal-insulator transition properties and temperature dependent reflectance near isosbestic point were studied. The results show that the resistance of vanadium dioxide thin film changes over 1 order of magnitude after RTA at 450℃ for 30s. There is a dip in the reflectance spectrum of vanadium dioxide thin film for plasmonic resonance absorption, the dip shifts to low wavelength as vanadium dioxide changes from insulator to metal. | |||
TO cite this article:Liang Jiran,Li Na,Liu Xing, et al. Optical reflectance properties near isosbestic point of vanadium dioxide thin films fabricated by rapid thermal annealing oxidation vanadium metal thin film[OL].[20 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4570939 |
4. NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer | |||
QIN Yuxiang,LIU Kaixuan | |||
Electrics, Communication and Autocontrol Technology 27 December 2011 | |||
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Abstract:W18O49 nanowires solvothermally synthesized were modified by depositing a thin layer of titanium (Ti) overlayer on the surface using magnetron sputtering method, followed by annealing at 350℃ for 2 h. The microstructure of pure and Ti-modified W18O49 nanowires were investigated. Gas sensors based on pure and Ti-modified W18O49 nanowires were fabricated and the NO2-sensing properties were examined. Ti modifying not only lowered the optimal operating temperature of W18O49 nanowires sensors from 150℃to room temperature but also improved the maximum gas response value. In particular, temperature-dependent response characteristic reversal was observed for the Ti-modified W18O49 nanowires, which behave as a p-type semiconductor at room temperature. Besides, the Ti-modified nanowires exhibited rapid response characteristic to NO2 gas. The Ti-modified nanowires film obtained by controlling the tiatanium sputtering time to 1 min showed the highest gas response value and the shortest response time at room temperature. | |||
TO cite this article:QIN Yuxiang,LIU Kaixuan. NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer[OL].[27 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4457950 |
5. Thermal annealing effect on sputtered tungsten oxide thin films | |||
QIN Yuxiang,SHEN Wanjiang | |||
Electrics, Communication and Autocontrol Technology 26 December 2011 | |||
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Abstract:Tungsten oxide thin films have been deposited on alumina substrates by reactive radio frequency (rf) magnetron sputtering, following by annealed in air at 200, 300, 400, and 600 oC for 4 h. The effects of thermal annealing on the microstructure and gas sensing properties of the tungsten oxide thin films were studied. The surface morphology, microstructure and chemical composition of the annealed films were investigated by X-ray diffraction(XRD), field emission scanning electron microscope (FE-SEM) and X-ray photoelectron spectroscopy (XPS) techniques. When raising the annealing temperature from 200oC to 400oC, the film tends to crystallize to triclinic structure from amorphous state, while higher temperature results in an increase in grain size and a shrinkage of structural pores. The film annealed at 400oC has lower O/W ratio than the one annealed at 600oC. The NO2-sensing properties of the annealed films were also evaluated, and the measurements revealed that the tungsten oxide film annealed at 400 oC has a quicker response/recovery and the highest sensitivity to 1ppm NO2 due to its loose and porous structure and small grain size. | |||
TO cite this article:QIN Yuxiang,SHEN Wanjiang. Thermal annealing effect on sputtered tungsten oxide thin films[OL].[26 December 2011] http://en.paper.edu.cn/en_releasepaper/content/4457894 |
6. Optical waveguide ring resonator with multi-turn structure | |||
Wang Shijun,Ma Huilian,Jin Zhonghe | |||
Electrics, Communication and Autocontrol Technology 16 January 2008 | |||
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Abstract:Resonator micro optic gyro (R-MOG) is a high accuracy inertial rotation sensor based on the Sagnac effect. Optical waveguide ring resonator (OWRR) is the core-sensing element in R-MOG. Calculations show that the shot noise limited sensitivity of the gyro can be improved by introducing the multi-turn structure into the ring when the excess loss of the crossed waveguides is lower than a critical value. The OWRR with two turns is fabricated on silica waveguide by low pressure chemical vapor deposition (LPVCD) method. Measurements show that the finesses of the one-turn resonator and the two-turn resonator are 50.8 and 20.0 respectively. The great degeneracy of the finesse is due to that the excess loss of the crossed waveguides is high as 0.899dB. Further analysis shows when the excess loss is lower than 0.3dB, the gyro sensitivity will be increased by means of the OWRR with multi-turn structures. | |||
TO cite this article:Wang Shijun,Ma Huilian,Jin Zhonghe. Optical waveguide ring resonator with multi-turn structure[OL].[16 January 2008] http://en.paper.edu.cn/en_releasepaper/content/18138 |
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