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Infrared fast-response thermoelectric effect in sapphire single crystal
hui zhao 1 *,kun zhao 2,Zhiqing Lü 2,hao liu 2,na zhou 2,song-qing zhao 2
1.Department of Materials Science and Engineering
2.Department of Mathematics and Physics, China University of Petroleum, Beijing
*Correspondence author
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Funding: none
Opened online:25 May 2009
Accepted by: none
Citation: hui zhao,kun zhao,Zhiqing Lü.Infrared fast-response thermoelectric effect in sapphire single crystal[OL]. [25 May 2009] http://en.paper.edu.cn/en_releasepaper/content/32505
 
 
Fast-response photoelectric effect has been observed in the as-supplied sapphire single crystals without any bias at ambient temperature under irradiation of a 1064 nm pulsed laser of 25 ps in duration. The rise time and full width at half maximum are about 0.8 ns and 0.42 ns for 0o tilting sample, 0.8 ns and 0.64 ns for 10o tilting sample. The peak values increased nearly linearly with the on-sample energy density. The possible mechanism can be described as the combination of the laser-induced hot carrier photovoltaic effect and Seebeck effect.
Keywords:infrared;photoelectric effect;fast-response
 
 
 

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