Nanocrystalline MoS2 through Directional Growth along the (002) Crystal Plane under High Pressure

Wang Shanmin; He Duanwei

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Nanocrystalline MoS2 through Directional Growth along the (002) Crystal Plane under High Pressure

Wang Shanmin #,He Duanwei *

Institute of Atomic and Molecular Physics, Sichuan University

*Correspondence author

#Submitted by

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Funding: Specialized Research Fund for the Doctoral Program of Higher Education（No.Grant no. 20070610110）

Opened online:19 January 2011

Accepted by: none

Citation: Wang Shanmin,He Duanwei.Nanocrystalline MoS2 through Directional Growth along the (002) Crystal Plane under High Pressure[OL]. [19 January 2011] http://en.paper.edu.cn/en_releasepaper/content/4405950

The directional growth experiments of graphite-like structured MoS2 crystallites have been conducted by utilizing a designed sample cell assembly under high pressure (2.0 and 5.0 GPa) and high temperature (700 oC). X-ray diffraction (XRD) and scanning electron microscope (SEM) are used to characterize the samples. The results show that the prepared nanocrystalline MoS2 (n-MoS2) crystals have a hexagonal layered structure. The crystal is uncovered to grow preferentially along the (002) plane, indicating that the low-energy surface is the (002) plane of the crystal. The striking diffuse/broadening nature of Bragg reflection is also analyzed in details, and considered to be associated with the defect structures of the layers stacking and rotational disorder. Measurements of crystallite/grain size are performed by using XRD technique and SEM observation. The measurement results suggest that the traditional peak broadening analysis techniques, including Williamson-Hall formula and Scherrer equation, may not be suitable for the present poorly crystallized n-MoS2 situation. The results may be conducive to have an insight into the growth mechanism and defects analysis of the layer-structured materials.

Keywords:high pressure; crystal growth; defects;nanostructures

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