NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer

QIN Yuxiang; LIU Kaixuan

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NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer

QIN Yuxiang 1 * #,LIU Kaixuan 2

1.School of Electronic Information Engineering, Tianjin University, TianJin 300072

2.School of Electronic Information Engineering, Tianjin University, Tianjin 300072

*Correspondence author

#Submitted by

Subject:

Funding: 教育部博士点新教师基金（No.200800561109）, 国家自然科学基金（No.60801018）

Opened online: 5 January 2012

Accepted by: none

Citation: QIN Yuxiang,LIU Kaixuan.NO2-sensing Properties of Tungsten Oxide Nanowires Thin Film Modified by Ti-overlayer[OL]. [ 5 January 2012] http://en.paper.edu.cn/en_releasepaper/content/4457950

W18O49 nanowires solvothermally synthesized were modified by depositing a thin layer of titanium (Ti) overlayer on the surface using magnetron sputtering method, followed by annealing at 350℃ for 2 h. The microstructure of pure and Ti-modified W18O49 nanowires were investigated. Gas sensors based on pure and Ti-modified W18O49 nanowires were fabricated and the NO2-sensing properties were examined. Ti modifying not only lowered the optimal operating temperature of W18O49 nanowires sensors from 150℃to room temperature but also improved the maximum gas response value. In particular, temperature-dependent response characteristic reversal was observed for the Ti-modified W18O49 nanowires, which behave as a p-type semiconductor at room temperature. Besides, the Ti-modified nanowires exhibited rapid response characteristic to NO2 gas. The Ti-modified nanowires film obtained by controlling the tiatanium sputtering time to 1 min showed the highest gas response value and the shortest response time at room temperature.

Keywords:gas sensor; tungsten oxide; nanowires; NO2

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