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Influence of neutron irradiation on persistent photonconductivity in GaN
ZHANG Minglan 1 * #,Di Zhaoting 2,YANG Ruixia 2
1.Colleage of Information Engineering, Hebei University of Technology, TianJin 300401
2.Colleage of Information Engineering, Hebei University of Technology, Tianjin 300401
*Correspondence author
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Funding: 河北省高等学校科学技术研究重点项目(No.项目编号:ZD2010124), 高等学校博士学科点专项科研基金资助课题新教师类(No.项目编号:20111317120005)
Opened online:21 November 2012
Accepted by: none
Citation: ZHANG Minglan,Di Zhaoting,YANG Ruixia.Influence of neutron irradiation on persistent photonconductivity in GaN[OL]. [21 November 2012] http://en.paper.edu.cn/en_releasepaper/content/4494811
 
 
Unintentionally doped GaN films grown by MOCVD were irradiated with neutron at room temperature. In order to investigate the influence of neutron irradiation, persistent photoconductivity (PPC) and low temperature photoluminescence (PL) measurements were carried out. Pronounced PPC is observed, and yellow luminescence (YL) band is not be detected by PL measurement at 5K, suggesting that PPC and YL are not related. Moreover, PPC phenomena has been enhanced by neutron irradiation and quenched by the followed annealing process at 900 C. The possible origin of PPC in GaN is discussed.
Keywords:Microelectronics and solid-state electronics; GaN; persistent photoconductivity
 
 
 

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