Home > Papers

 
 
Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method
Li Min 1,Lan Linfeng 2 * #,Xu Miao 2,Xu hua 2,Luo Dongxiang 2,Xiao Peng 2,Yao Rihui 2,Peng Junbiao 2
1.State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, GuangZhou 510640
2.State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640
*Correspondence author
#Submitted by
Subject:
Funding: the Guangdong Natural Science Foundation（No.Grant No. S2012040007003）, the National Natural Science Foundation of China （No.Grant Nos. 61204087, 51173049, U0634003, and 60937001）, the Specialized Research Fund for the Doctoral Program of Higher Education （No.Grant No. 20120172120008）
Opened online:13 February 2013
Accepted by: none
Citation: Li Min,Lan Linfeng,Xu Miao.Performance Improvement of Oxide Thin-Film Transistors by a Two-Step-Annealing Method[OL]. [13 February 2013] http://en.paper.edu.cn/en_releasepaper/content/4519284
 
 
In this paper, thin-film transistor (TFT) with indium zinc oxide (IZO) channel layer was fabricated using a two-step-annealing method. The device showed better uniformity and better stability under positive bias stress, negative bias illumination stress, and temperature stress, compared to those with only one annealing step. The falling rate of this device was as high as 0.593 eV/V, showing that trap states in the channel were greatly reduced by the two-step-annealing process.
Keywords:oxide semiconductor; thin-film transistor; indium zinc oxide
 
 
 

For this paper
  • ● PDF (0B)
  • ● Revision 0 　　
  • ● Print this paper
  • ● Recommend this paper to a friend
  • ● Add to my favorite list

    Saved Papers

    Please enter a name for this paper to be shown in your personalized Saved Papers list

Tags
Add yours

Related Papers

Statistics
PDF Downloaded 457
Bookmarked 0
Recommend 5
Comments Array
Submit your papers