High quality Si doped Al0.49Ga0.51N grown on AlN/AlGaN superlattice with MOCVD

LI Yang; CHEN Shengchang; FANG Yanyan; LI Senlin; TIAN Wu; DAI Jiangnan; WU Zhihao; CHEN Changqing

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High quality Si doped Al0.49Ga0.51N grown on AlN/AlGaN superlattice with MOCVD

LI Yang #,CHEN Shengchang,FANG Yanyan,LI Senlin,TIAN Wu,DAI Jiangnan,WU Zhihao *,CHEN Changqing

Huazhong University of Science and Technology/Wuhan National Lab for Optoelectronics, Wuhan 430074

*Correspondence author

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Funding: Doctoral Program Foundation of Institutions of Higher Education of China （No.No. 20090142120084）

Opened online:11 March 2013

Accepted by: none

Citation: LI Yang,CHEN Shengchang,FANG Yanyan.High quality Si doped Al0.49Ga0.51N grown on AlN/AlGaN superlattice with MOCVD[OL]. [11 March 2013] http://en.paper.edu.cn/en_releasepaper/content/4523065

In this paper, 1.5 um thick high quality Si doped Al0.49Ga0.51N layer was obtained by inserting a set of 20 periods AlN/Al0.4Ga0.6N superlattices for strain relief and improvement of crystal structure quality. The 295 arcsec FWHM of (0002) X-ray diffraction rocking curve indicates high crystal quality of the layer and the (10-15) reciprocal lattice map was obtained to estimate the strain state of the n-Al0.49Ga0.51N. The surface morphology was investigated through atomic force microscope. Room temperature Hall and Capacitance-Voltage measurement show that the electron concentration is as high as 4.2×10^18 cm^-3 with a mobility of 65.5 cm^2/Vs. 310nm UV LED structures were grown on this n-Al0.49Ga0.51N layer. The current voltage characteristic of the 310nm UV LED was measured, and the working voltage under 20mA bias is 6.1V.

Keywords:n-Al0.49Ga0.51N; AlN/AlGaN superlattice; Metal organic chemical vapor deposition (MOCVD)

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