A Simulation and Experimental Study for improving thermal reliability of  P-i-N power diodes

Jia Yunpeng; Wu Yu; Hu Dongqing

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A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes

Jia Yunpeng 1 * #,Wu Yu 2,Hu Dongqing 2

1.School of Electronic Information& Control Engineering, Beijing University of Technology, Beijing 100124

2.School of Electronic Information& Control Engineering, Beijing University of Technology

*Correspondence author

#Submitted by

Subject:

Funding: The Specialized Research Fund for the Doctoral Program of Higher Education of China （No.GrantNo. 20111103120016）

Opened online: 4 March 2013

Accepted by: none

Citation: Jia Yunpeng,Wu Yu,Hu Dongqing.A Simulation and Experimental Study for improving thermal reliability of P-i-N power diodes[OL]. [ 4 March 2013] http://en.paper.edu.cn/en_releasepaper/content/4523193

In this paper, the temperature dependence modes in modern p-i-n power diodes is investigated. Resorting to therotical derivation, an inversion point of temperature coefficiency TK in current-voltage characteristics of p-i-n power diodes is proved to exist. Semiconductor device simulations are used in order to determine the parameters which influence temperature coefficiency TK. Both simulation and experimental results show that a positive temperature coefficiency TK for forward voltage drop VF in interesting current region is possible, if the relating parameters is moderately adjusted. With a SEM microgragh technique, the structure of the experimental samples were measured.

Keywords:p-i-n power diode; forward voltage drop; temperature coefficiency

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