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Sponsored by the Center for Science and Technology Development of the Ministry of Education
Supervised by Ministry of Education of the People's Republic of China
This paper investigates associative memory based on memristive neural networks. Based on the reproducible gradual resistance tuning in bipolar mode, a first-order voltage-controlled memristive model is employed with asymmetric voltage thresholds. Since memrisive devices are especially tiny to be densely packed in crossbar-like structures and possess long time memory needed by neuromorphic synapses, this paper shows how to approximate the behavior of synapses in neural networks using this memristive device. Certain neural networks are established and applied in associative memory.