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Theoretical analysis of the double-layer emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells
HUANG Haibin * #,GAO Jiang,Wolfgang R. Fahrner,ZHOU Lang
School of Photovoltaics, Nanchuang University, 330031
*Correspondence author
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Funding: none
Opened online:21 April 2014
Accepted by: none
Citation: HUANG Haibin,GAO Jiang,Wolfgang R. Fahrner.Theoretical analysis of the double-layer emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells[OL]. [21 April 2014] http://en.paper.edu.cn/en_releasepaper/content/4593444
 
 
A new emitter structure containing two a-Si:H layers with different doping concentrations is designed for the a-Si:H/c-Si heterojunction solar cell. Based on an AFORS-HET simulation it is concluded that an efficiency of 26.0% (AM1.5) can be obtained by means of the new emitter structure. The operation mechanism of this improvement is analyzed. It is found that: 1) the double layer emitter enhances the internal electrical field and the carriers' drift velocity. In turn the quantum efficiency of the devices at short wavelengths and the short circuit current of the solar cells increase. 2) The tunneling probability at the interface of the transparent conductive oxide layer and the emitter is enhanced due to the heavier doped layers of the double-layer emitter. This reduces the series resistances.
Keywords:double-layer emitter, a-Si:H/c-Si, drift velocity, tunneling probability
 
 
 

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