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| The structural and optical properties of Be-doped GaAs grown by MBE |
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Huimin Jia 1 #,Zhipeng Wei 1 *,Liang Chang 1,Dan Fang 2,Jilong Tang 2,Xuan Fang 1,Xiaohua Wang 1,Xiaohui Ma 2
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1.State key laboratory of high power semiconductor laser, School of Science, Changchun University of Science and Technology,Changchun 130022,China
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2.State key laboratory of high power semiconductor laser, Changchun University of Science and Technology,Changchun 130022,China
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| *Correspondence author |
| #Submitted by |
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| Subject: |
| Funding:
National Natural Science Foundation of China （No.61076039, 61204065, 61205193, 61307045), Research Fund for the Doctoral Program of Higher Education of China） |
| Opened online: 5 August 2014 |
| Accepted by:
none |
| Citation: Huimin Jia,Zhipeng Wei,Liang Chang.The structural and optical properties of Be-doped GaAs grown by MBE[OL]. [ 5 August 2014] http://en.paper.edu.cn/en_releasepaper/content/4604845 |
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