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Engineering the magnetic anisotropy of ferromagnetic metal films under electric field
ZHU Wanjiao 1 #,DING Hangchen 1,TONG Wenyi 1,GONG Shijing 1,WAN Xiangang 2,DUAN Chun-Gang 1 *
1.Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China
2.Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
*Correspondence author
#Submitted by
Subject:
Funding: 973 Programs (No.No. 2014CB921104, 2013CB922301), NSF of China)
Opened online: 3 October 2014
Accepted by: none
Citation: ZHU Wanjiao,DING Hangchen,TONG Wenyi.Engineering the magnetic anisotropy of ferromagnetic metal films under electric field[OL]. [ 3 October 2014] http://en.paper.edu.cn/en_releasepaper/content/4611574
 
 
We propose that it is possible to engineer both the magnetic anisotropy energy (MAE) and the electric field modification of the MAE of ferromagnetic films. Using our recently developed orbital selective external potential (OSEP) method, we have unambiguously identified different contributions of each atomic orbital to the MAE of the ferromagnetic metal films, and find that the occupation of 3 dz2orbital is the key issue for the system to display large electric field response. Based on the theoretical conclusion, we have successfully designed several interesting Fe monolayers which demonstrate dramatically different MAE and could exhibit strong electric field control of magnetism. Our work may open a new avenue to the artificial design of electrically controlled magnetic devices.
Keywords:Magnetic anisotropy, Electric field control, orbital selective external potential (OSEP)
 
 
 

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