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Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth
LIN Guangyang,LAN Xiaoling,WANG Chen,CHEN Chaowen,CHNE Ningli,LI Cheng * #,CHEN Songyan,HUANG Wei,LAI Hongkai
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People’s Republic of China
*Correspondence author
#Submitted by
Subject:
Funding: Ph.D Programs Foundation of Ministry of Educaion of China(No.20110121110025), National Natural Science Foundation of China(No.61474094, 61176092)
Opened online:20 November 2015
Accepted by: none
Citation: LIN Guangyang,LAN Xiaoling,WANG Chen.Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth[OL]. [20 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661255
 
 
Strain in germanium (Ge) and germanium-on-insulator (GOI) stripes with SiNx capping layer was modulated through varying stripe width and NH3/SiH4 gas ratio for growth of SiNx. It was found that tensile strain increases with augment of stripe width for Ge stripes, while decreases for GOI stripes. The divergence is attributable to higher strain relaxation in SiNx capping layer for Ge stripes and larger strain loss into SiO2 and Si substrate for GOI stripes as stripe width increase. Silicon nitride capping layers deposited at smaller NH3/SiH4 ratio result in larger tensile strain in Ge layer, which can be attributed to rich Si-H bonds in the SiNx layer.
Keywords:germanium (Ge) stripe; tensile strain adjustment; SiNx; NH3/SiH4 gas ratio
 
 
 

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