|
Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth |
|
LIN Guangyang,LAN Xiaoling,WANG Chen,CHEN Chaowen,CHNE Ningli,LI Cheng * #,CHEN Songyan,HUANG Wei,LAI Hongkai
|
|
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, Fujian 361005, People’s Republic of China
|
|
*Correspondence author |
#Submitted by |
|
Subject: |
Funding:
Ph.D Programs Foundation of Ministry of Educaion of China(No.20110121110025), National Natural Science Foundation of China(No.61474094, 61176092) |
Opened online:20 November 2015 |
Accepted by:
none |
Citation: LIN Guangyang,LAN Xiaoling,WANG Chen.Modulation of strain in SiNx-capped germanium and germanium-on-insulator stripes by varying stripe width and NH3/SiH4 gas ratio during SiNx growth[OL]. [20 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4661255 |
|