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The first principle study of adsorption for two halogens on fused silica surface
Zhang Cangsheng #,Lu Pengfei *
State Key Laboratory of Information Photonics and Optical Communications Institute of Information Photonics and Optical Communications，BUPT
*Correspondence author
#Submitted by
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Funding: none
Opened online: 7 November 2016
Accepted by: none
Citation: Zhang Cangsheng,Lu Pengfei.The first principle study of adsorption for two halogens on fused silica surface[OL]. [ 7 November 2016] http://en.paper.edu.cn/en_releasepaper/content/4708382
 
 
Halogen is always brought by the process of wet etching for fused silica devices, which dramatically influence the performance of the devices. Using ab initio quantum mechanical methods we investigate the adsorption properties for halogen atoms (F, Cl) on fused silica surface. We focus on the interaction mechanisms of halogen atoms with two main surface defects and make comparison for the absorption capacity of different surface defects. Furthermore, the electronic structure for impurity defects are also studied.
Keywords:First-principle; Fused silica; Surface defect; Impurity defect; Adsorption
 
 
 

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