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Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy |
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GE Xiaotian 1 #,WANG Dengkui 1,GAO Xian 1,FANG Xuan 1,NIU Shouzhu 1,GAO Hongyi 1,TANG Jilong 1,WANG Xiaohua 1,WEI Zhipeng 1 *,CHEN Rui 2
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1.State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,Changchun 130022, China
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2.Department of Electrical and Electronic Engineering,South University of Science and Technology of China,Shenzhen, 518055, China
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*Correspondence author |
#Submitted by |
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Subject: |
Funding:
Developing Project of Science and Technology of Jilin Province (No.20160519007JH, 20160101255JC, 20160519007JH), R. C. acknowledges the supports from national 1000 plan for young talents and Shenzhen Science and Technology Innovation Committee (No.JCYJ20150630162649956, JCYJ20150930160634263 and KQTD2015071710313656), Project of Jilin Province Development and Reform (No.2014Y110), Project of Changchun Science and Technology (No.14 KG018), National Natural Science Foundation of China (No.61307045, 61404009, 61474010, 61574022, 61504012, 11404219, 11404161 and 11574130) |
Opened online: 2 December 2016 |
Accepted by:
none |
Citation: GE Xiaotian,WANG Dengkui,GAO Xian.Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy[OL]. [ 2 December 2016] http://en.paper.edu.cn/en_releasepaper/content/4711855 |
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