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Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy
GE Xiaotian 1 #,WANG Dengkui 1,GAO Xian 1,FANG Xuan 1,NIU Shouzhu 1,GAO Hongyi 1,TANG Jilong 1,WANG Xiaohua 1,WEI Zhipeng 1 *,CHEN Rui 2
1.State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology,Changchun 130022, China
2.Department of Electrical and Electronic Engineering,South University of Science and Technology of China,Shenzhen, 518055, China
*Correspondence author
#Submitted by
Subject:
Funding: Developing Project of Science and Technology of Jilin Province (No.20160519007JH, 20160101255JC, 20160519007JH), R. C. acknowledges the supports from national 1000 plan for young talents and Shenzhen Science and Technology Innovation Committee (No.JCYJ20150630162649956, JCYJ20150930160634263 and KQTD2015071710313656), Project of Jilin Province Development and Reform (No.2014Y110), Project of Changchun Science and Technology (No.14 KG018), National Natural Science Foundation of China (No.61307045, 61404009, 61474010, 61574022, 61504012, 11404219, 11404161 and 11574130)
Opened online: 2 December 2016
Accepted by: none
Citation: GE Xiaotian,WANG Dengkui,GAO Xian.Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy[OL]. [ 2 December 2016] http://en.paper.edu.cn/en_releasepaper/content/4711855
 
 
GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs was grown by molecular beam epitaxy. Temperature and excitation power dependent photoluminescence (PL) of the MQWs were investigated in detail. The PL spectra showed a unique emission evolution. Two competitive peaks were observed from 40 to 90 K in temperature dependent PL spectra. The peak located at low energy shoulder was confirmed to be localized states emission (LE) by the long tail and the inverted S-shaped emission band width obtained from the temperature dependent emission. The high energy side peak was confirmed to be free carrier emission by Varshni equation fitting. It is observed that the LE peak exhibited blue shift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. As a result, the localized states in GaAs0.92Sb0.08/Al0.2Ga0.8As MQWs have been confirmed and explained by carrier dynamics.
Keywords:GaAs0.92Sb0.08/Al0.2Ga0.8As multiple quantum wells; Molecular beam epitaxy; Photoluminescence; Localized states emission
 
 
 

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