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More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures
KONG Xinyu 1,REN Xiaomin 2 *,LIU Hao 2,WANG Qi 2,LIU Kai 2,HUANG Yongqing 2
1.State Key Laboratory of Information Photonics and Optical Communications at Beijing University of Posts and Telecommunications, Zh. I. Alferov Russian-Chinese Joint laboratory of Information Optoelectronics and Nanoheterostructures, and BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing 100876, People’s Republic of China;State Key Laboratory of Information Photonics and Optical Communications at Beijing University of Posts and Telecommunications, Zh. I. Alferov Russian-Chinese Joint laboratory of Information Optoelectronics and Nanoheterostructures, and BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing 100876, People’s Republic of China;State Key Laboratory of Information Photonics and Optical Communications at Beijing University of Posts and Telecommunications, Zh. I. Alferov Russian-Chinese Joint laboratory of Information Optoelectronics and Nanoheterostructures, and BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing 100876, People’s Republic of China;State Key Laboratory of Information Photonics and Optical Communications at Beijing University of Posts and Telecommunications, Zh. I. Alferov Russian-Chinese Joint laboratory of Information Optoelectronics and Nanoheterostructures, and BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing 100876, People’s Republic of China;State Key Laboratory of Information Photonics and Optical Communications at Beijing University of Posts and Telecommunications, Zh. I. Alferov Russian-Chinese Joint laboratory of Information Optoelectronics and Nanoheterostructures, and BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing 100876, People’s Republic of China;State Key Laboratory of Information Photonics and Optical Communications at Beijing Univer
2.
*Correspondence author
#Submitted by
Subject:
Funding: National Key R&D Special Project of China(No.2018YFB2200104), Beijing Municipal Science and Technology Project (No.Z191100004819012), National Natural Science Foundation of China(No.61674020)
Opened online:10 April 2020
Accepted by: none
Citation: KONG Xinyu,REN Xiaomin,LIU Hao.More accurate estimation of the linewidth of energy level dispersion in GaAs based Semiconductor Heterostructures[OL]. [10 April 2020] http://en.paper.edu.cn/en_releasepaper/content/4751465
 
 
As a new advancement of the theory of fractional dimensionality of electron states architecture in semiconductor heterostructure physics, more accurate estimation of the linewidth of energy level dispersion in GaAs based semiconductor heterostructures at a temperature of 300K has been made by adopting a modified energy level dispersion function featuring an asymmetric lineshape and the relevant dimensional similarity functions modified mainly by introducing a novel concept of quantization baseline of density of states. It is determined as about 0.00221eV, which is in the same order of magnitude with the previous result, but about 10% larger than that. This work may magnify the impact of the fractional dimensionality theory on the development of semiconductor quantum electronics and optoelectronics and even that of fundamental physics.
Keywords:semiconductor quantum theory; fractional dimensionality theory; electron states architecture; energy level dispersion; linewidth; dimensional similarity function
 
 
 

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