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| We use a quantum-mechanical model to study the gate tunneling current of Hf-based high-k dielectric films for nanoscale MOSFETs. The three-dimensional gate current component evaluation is performed by the traveling wave calculations for the thermionic emission, Fowler-Nordheim (FN) tunneling, and direct tunneling through the oxide barrier. For the two-dimensional gate current component originated from the subbands in the inversion layers, a transmission calculation is performed. Various Hf-based high-k structures and materials of interest have been examined and compared to access the reduction of gate current in these structures. Effects of nitrogen content, hafnium content, aluminum content, and interfacial layer (IL) on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content, aluminum content, and the composition of the IL. Our computational results are in very good agreement with experimental data. |
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| Keywords:High-k；Gate current；Quantum-mechanical model |
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