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Atomic structures of boron-induced protrusion features on Si(100) surfaces
Zhenghui Liu,Zhaohui Zhang * #,Xing Zhu
School of Physics, Peking University
*Correspondence author
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Funding: 国家自然科学基金,国家自然科学基金,教育部博士点基金（No.90406007,10574002,20040001002）
Opened online:29 December 2007
Accepted by: none
Citation: Zhenghui Liu,Zhaohui Zhang,Xing Zhu .Atomic structures of boron-induced protrusion features on Si(100) surfaces[OL]. [29 December 2007] http://en.paper.edu.cn/en_releasepaper/content/17564
 
 
It is known that ultrahigh doping can be realized for boron on Si(100) substrates while boron induced features on a heavily boron doped Si(100) surface cannot form any periodic structure. Here we demonstrate that boron-induced features actually result from the adsorption of boron-silicon addimers, owing to the underneath substitutional boron atoms at the second layer. Furthermore, more closely arranged boron atoms at the second layer make the energy of the (2×1) surface lower,and the whole second layer can be completely occupied by boron atoms while the surface is still (2×1) reconstructed.
Keywords:Si(100) surface, boron, scanning tunneling microscopy, ab initio calculation
 
 
 

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