Experimental study on heavy ion single event effects in SOI SRAMs

Li Yonghong; He Chaohui; Zhao Fazhan; Guo Tianlei; Liu Gang; Han Zhengsheng; Guo Gang; Liu Jiancheng; Teng rui; Hui Ning; Chen Quan

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Experimental study on heavy ion single event effects in SOI SRAMs

Li Yonghong 1 * #,He Chaohui 2,Zhao Fazhan 3, Guo Tianlei 3,Liu Gang 3,Han Zhengsheng 3,Guo Gang 4,Liu Jiancheng 4, Teng rui 4, Hui Ning 4,Chen Quan 4

1.Xi’an Jiaotong University

2.Xi＇an Jiaotong University

3.Institute of Microelectronics of Chinese Academy of Sciences

4.China Institute of Atomic Energy

*Correspondence author

#Submitted by

Subject:

Funding: none

Opened online: 3 September 2008

Accepted by: none

Citation: Li Yonghong,He Chaohui,Zhao Fazhan.Experimental study on heavy ion single event effects in SOI SRAMs[OL]. [ 3 September 2008] http://en.paper.edu.cn/en_releasepaper/content/23714

64K silicon-on-insulator (SOI) SRAMs were exposed to different heavy ions, Cu, Br, I, Kr. Experiment results show that the heavy ion single event upset(SEU) threshold Linear Energy Transfer (LET) in the 64K SOI SRAMs is about 71.8 MeV.cm2/mg. According to the experimental results, the single-event upset rate（SEUR）in space orbits are calculated and they are at the order of 10-13 upset/(day.bit) .

Keywords:SOI SRAM; single event upset, single event upset rate; space radiation.

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