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Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process
Yuling Liu 1,Xinhuan Niu 1 *,Tan Baimei 2,Wang Shengli 2
1.Hebei university of technology
2.Institute of Microelectronics, Hebei University of Technology
*Correspondence author
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Funding: 教育部博士点基金;天津自然科学基金;国家自然科学基金(No.20050080007;043801211;10676008)
Opened online: 7 January 2009
Accepted by: none
Citation: Yuling Liu,Xinhuan Niu,Tan Baimei.Control Action of Temperature on ULSI Silicon Substrate CMP Removal Rate and Kinetics Process[OL]. [ 7 January 2009] http://en.paper.edu.cn/en_releasepaper/content/27423
 
 
The kinetics process and control process of chemical mechanical high precision finishing for material surface were studied in this paper. According to the experiments, the seven kinetics process for chemical mechanical polishing(CMP) was generalized. Through investigating the CMP process of ULSI silicon substrate, we found that chemical process was the CMP control process under the same mechanical action condition, which was caused by temperature. Such key factor of influencing chemical reactions was effectively settled, which was advantageous to improving other materials CMP removal rate.
Keywords:Chemical mechanical polishing; Kinetics process; Silicon substrate; Removal rate; Polishing temperature
 
 
 

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