Plausible Modelling for Stochastic Process of  DSBs Generation and Repair Process under Ion Radiation (IR)

Qi jinpeng; Shao shihuang; Ding Yongsheng

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Plausible Modelling for Stochastic Process of DSBs Generation and Repair Process under Ion Radiation (IR)

Qi jinpeng * #,Shao shihuang,Ding Yongsheng

College of Information Science & Technology, Donghua University

*Correspondence author

#Submitted by

Subject:

Funding: 教育部博士点基金,上海市科委项目,上海市MICCAI开放实验室项目（No.20060255006, 08JC1400100,06dz22013）

Opened online:22 September 2009

Accepted by: none

Citation: Qi jinpeng,Shao shihuang,Ding Yongsheng.Plausible Modelling for Stochastic Process of DSBs Generation and Repair Process under Ion Radiation (IR)[OL]. [22 September 2009] http://en.paper.edu.cn/en_releasepaper/content/35351

In response to acute perturbations from outside, cell can trigger its self-defense mechanisms to fight against genome stresses. To simulate the kinetics of cellular to respond to DNA damage at single cell level, a model of the double strand breaks (DSBs) generation and repair process was proposed under continuous IR. The model can be successfully used to present the kinetics of DSBs generation and their repair, as well as the complicated interactions among vital components during the continuous radiation time. In different IR dose domains, the simulations suggest that the capability of cellular responding to DNA damage begin to decrease as IR overpasses some strength threshold.

Keywords:DNA Damage;IR;P53;Signal pathway;Modeling

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