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Growth and characterization of InN nanocolumns on InGaN buffer layers
Yang Pan #,Ti Wang,Chang Liu *
Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Physics, Wuhan University
*Correspondence author
#Submitted by
Subject:
Funding: 教育部博士点基金（No.20060486047）
Opened online:19 March 2010
Accepted by: none
Citation: Yang Pan,Ti Wang,Chang Liu.Growth and characterization of InN nanocolumns on InGaN buffer layers[OL]. [19 March 2010] http://en.paper.edu.cn/en_releasepaper/content/40885
 
 
C-axis-aligned InN nanocolumns arrays were vertically grown, on 3μm GaN substrates with InGaN buffer layers by radio-frequency molecular beam epitaxy. The density of the nanocolumns could be controlled by adjusting the ratio of In and N. X-ray diffraction, transmission electron microscopy, and field-emission scanning electron microscope were used to study the structural properties of the nanocolumns. And the growth mechanism was studied.
Keywords:InN;InGaN buffer;Molecular beam epitaxy;Nanocolumns
 
 
 

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