Electron mobility in strained wurtzite AlGaN/GaN heterojunctions with finite-thick barriers and its pressure effect

WU Wei; BAN Shiliang; QU Yuan

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Electron mobility in strained wurtzite AlGaN/GaN heterojunctions with finite-thick barriers and its pressure effect

WU Wei 1,BAN Shiliang 2 * #,QU Yuan 2

1.School of Physical Science and Technology, Inner Mongolia University

2.School of Physical Science and Technology, Inner Mongolia University，Hohhot，010021

*Correspondence author

#Submitted by

Subject:

Funding: National Natural Science Foundation of China （No.No.60966001）, Key Project of Natural Science Foundation of Inner Mongolia Autonomous Region （No.No. 20080404Zd02）, Specialized Research Fund for the Doctoral Program of Higher Education of China （No.No. 20070126001）

Opened online:25 January 2011

Accepted by: none

Citation: WU Wei,BAN Shiliang,QU Yuan.Electron mobility in strained wurtzite AlGaN/GaN heterojunctions with finite-thick barriers and its pressure effect[OL]. [25 January 2011] http://en.paper.edu.cn/en_releasepaper/content/4407365

Based on the force balance equation, the electron mobility in strained wurtzite AlGaN/GaN heterojunctions with finite-thick barriers at and above room temperature is discussed in consideration of the scattering from interface and half-space optical phonons. Considering the effects of ternary mixed crystal, the profile of conduction band and the distribution of two-dimensional electron gas are obtained by solving the Poisson and Schr?dinger equations self-consistently. The results show that the electron mobility increases with the increase of barrier thickness and gradually approaches a saturated value. The results also indicate that the scattering from half-space phonons in the channel plays a dominant role for the Al concentration >0.18 whereas that from the interface phonons is dominant for <0.18 in a heterojunction with a barrier width of 23nm. It is found that the strain and hydrostatic pressure decrease the electron mobility. The Results is compared with experimental data to demonstrate that the strain effect should be considered in the further work.

Keywords:condensed matter; wurtzite, heterojunctions, mobility, phonon

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