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Rectifying characteristics of Bi2Sr2Co2Oy/Si heterojunction
Yan Guoying 1 #,Bai Zilong 2 #,Wang Shufang 3 *,Liu Fuqiang 3,Wang Jianglong 3,Yu Wei 3,Fu Guangsheng 3
1.The College of Physics Science and Technology, Hebei University, HeBei BaoDing 071002
2. School of Information Engineering, Hebei University of Technology, 300401 Tianjin, PR China
3.The College of Physics Science and Technology, Hebei University, 071002 Baoding, PR China
*Correspondence author
#Submitted by
Subject:
Funding: This work was supported by the specialized research fund for the doctoral program of higher education of china under gran(No.No. 20091301120002)
Opened online:20 December 2012
Accepted by: none
Citation: Yan Guoying,Bai Zilong,Wang Shufang.Rectifying characteristics of Bi2Sr2Co2Oy/Si heterojunction[OL]. [20 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4503744
 
 
A Bi2Sr2Co2Oy/Si heterojunction has been obtained by growing a layer of p-type Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition, and its rectifying properties were studied in a wide temperature range from 20 to 300 K. The heterojuction exhibited a perfect rectifying characteristic and its transport mechanism under the forward bias can be attributed to a trap-filled limit conduction mechanism via the oxygen defects in the Bi2Sr2Co2Oy film and the interface defects of the heterojunction. The results demonstrated the potential application of a Bi2Sr2Co2Oy-based heterojunction in the electronic devices.
Keywords:Bi2Sr2Co2Oy/Si heterojunction; rectifying; pulsed laser deposition
 
 
 

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