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Simulations and Analysis of the Moving Mask UV Lithography for Thick-photoresist
YU Qian,ZHOU Zaifa * #,ZHANG Heng
School of Electronic Science and Technology, Southeast University, Nanjing 210096
*Correspondence author
#Submitted by
Subject:
Funding: Doctoral Fund of Ministry of Education of China （No.NO. 20100092120020)）, National S&T Major Project （No.NO. 2011ZX02507-001-003）
Opened online:11 November 2013
Accepted by: none
Citation: YU Qian,ZHOU Zaifa,ZHANG Heng.Simulations and Analysis of the Moving Mask UV Lithography for Thick-photoresist[OL]. [11 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4562316
 
 
A three-dimensional (3D) simulation system is developed for the moving mask UV lithography of thick photoresist. The exposure simulation model is obtained with consideration of the mask moving function, the refraction and energy loss of the UV light at the surface of photoresist, and the reflection at the photoresist/substrate interface. The development model is calculated by the fast marching method. In addition, the energy deposition distributions and the three-dimensional development profiles are presented under different conditions to study the effect of various parameters and to verify the accuracy by experiment. The results will be useful to understand the effects and to control the exposure conditions in the design process of moving mask UV lithography for thick-photoresist in the future.
Keywords:UV lithography; 3D simulation; moving mask lithography; thick-photoresist
 
 
 

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