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Bipolar and unipolar resistive switching mode in Zr-doped ZnO thin film for multi-bit resistance random access memory
XU Dinglin,TANG Minghua *,ZENG Baiwen,XIAO Yongguang
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan, China, 411105
*Correspondence author
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Funding: The Doctoral Program of Higher Education of China （No.Grant No. 20104301110001）
Opened online:25 November 2013
Accepted by: none
Citation: XU Dinglin,TANG Minghua,ZENG Baiwen.Bipolar and unipolar resistive switching mode in Zr-doped ZnO thin film for multi-bit resistance random access memory[OL]. [25 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4570062
 
 
In this work, we report the coexistence of the bipolar and unipolar resistive switching mode in Pt/Zn0.99Zr0.01O/Pt structure device. After the forming process, this device with URS behavior shows either URS mode in the same direction or BRS mode in the opposite directions during the reset process. By controlling different compliance currents (Icc) and the span of voltage sweeping in the reset process (Vstop), controllable multi-state resistances in low resistance states and high resistance states for the BRS mode were demonstrated. The reliability results indicate that our devices have high potential for the next generation nonvolatile memories application.
Keywords:Resistance random access memory (RRAM); Unipolar resistive switching (URS); Bipolar resistive switching (BRS); Compliance currents (Icc)
 
 
 

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