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Optical reflectance properties near isosbestic point of vanadium dioxide thin films fabricated by rapid thermal annealing oxidation vanadium metal thin film
Liang Jiran *,Li Na,Liu Xing,Hu Ming,Wu Maijun
School of electronic information engineering, Tianjin University
*Correspondence author
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Funding: This work was supported by the National Natural Science Foundation of China （No.No. 61101055) and Research Fund for the Doctoral Program of Higher Education）
Opened online:27 November 2013
Accepted by: none
Citation: Liang Jiran,Li Na,Liu Xing.Optical reflectance properties near isosbestic point of vanadium dioxide thin films fabricated by rapid thermal annealing oxidation vanadium metal thin film[OL]. [27 November 2013] http://en.paper.edu.cn/en_releasepaper/content/4570939
 
 
Vanadium dioxide thin films were fabricated by rapid thermal annealing vanadium thin films in oxygen atmosphere. The effects of annealing time on metal-insulator transition properties and temperature dependent reflectance near isosbestic point were studied. The results show that the resistance of vanadium dioxide thin film changes over 1 order of magnitude after RTA at 450℃ for 30s. There is a dip in the reflectance spectrum of vanadium dioxide thin film for plasmonic resonance absorption, the dip shifts to low wavelength as vanadium dioxide changes from insulator to metal.
Keywords:vanadium dioxide;phase transition;rapid thermal annealing
 
 
 

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