Modeling and Characterization of On-Chip Interconnects

YIN Wenyan; ZHAO Wensheng

Chinese︱Feedback︱Save this page

• Elaborating Academic Views 　　　　 • Exchanging Innovative Ideas
• Protecting Intellectual Properties 　　• Fast Sharing Science Papers

Sponsored by the Center for Science and Technology Development of the Ministry of Education
Supervised by Ministry of Education of the People's Republic of China

Home > Papers

Modeling and Characterization of On-Chip Interconnects

YIN Wenyan *,ZHAO Wensheng

Centre for optical and electromagnetic research, MOI, Zhejiang university, Hangzhou, 310058, China

*Correspondence author

#Submitted by

Subject:

Funding: This work was supported partially by the National NSFC under Grant 61171037, the Specialized Research Fund for the Doctoral Program of Higher Educ（No.SRFDP) of China under Grant 20100101110065, the National Basic Research Program under Grant 2009CB320204, and State Key Lab of MOI, Zhejiang University of China）

Opened online: 3 January 2014

Accepted by: none

Citation: YIN Wenyan,ZHAO Wensheng.Modeling and Characterization of On-Chip Interconnects[OL]. [ 3 January 2014] http://en.paper.edu.cn/en_releasepaper/content/4577445

In this article, one distributed circuit model for the on-chip single interconnect will be introduced at first, where all the lumped elements are frequency-independent and can be directly obtained from its geometrical and physical parameters. This ensures proper scalability of the model parameters because no optimization tuning or fitting for them is involved. Some popular and low-cost techniques, such as patterned ground shield (PGS) structures for suppressing the substrate loss of silicon substrate at high frequencies and differential signal transmission are also addressed here. Then, electromagnetic modeling of on-chip coupled (a)symmetrical interconnects will be performed, including all distributed parameters. The average power handling capability (APHC) of on-chip interconnects and even thin-film microstrip lines (TFML) are also addressed here. Finally, the electrothermal analysis of multilevel interconnects under electrostatic discharge (ESD) stress will be reported using the time-domain FEM.

Keywords:Microwave technique, Interconnect; distributed parameter; average power handling capability; time-domain finite element method (TD-FEM); electrothermal response

For this paper

● PDF (0B)
● Revision 0 　　
● Print this paper
● Recommend this paper to a friend
● Add to my favorite list

Saved Papers

Please enter a name for this paper to be shown in your personalized Saved Papers list

Tags

Add yours

Related Papers

Statistics

PDF Downloaded	351
Bookmarked	0
Recommend	5
Comments	Array

Submit your papers

Alert Name:
Alerting to:
Authentication email will be sent to your email address in 24 hours
Frequency:
Email Message Format:	Plain text Graphical(HTML)

Complete the form below and we will recommend the selected titles to your friends on your behalf. * Indicates a required field.
Your name*:
Your email address*:
Recipient's name*:
Recipient's email address*:
(multiple recipient's names and email addresses should be separated with semicolons)
Your comments:	I thought you would find the page(s) useful.

Your name:
Your email address:
Recipient's name:
Recipient's email address:
(multiple recipient's names and email addresses should be separated with semicolons)
Your comments:	I thought you would find this page useful.

Disclaimer: This message was sent to your friend using the "Send it to a friend" facility on the Sciencepaper Online’ WWW site, http://www.paper.edu.cn/en. The Sciencepaper Online is not responsible for the content of this email, and anything said in this email does not necessarily reflect the Sciencepaper Online's views.

	Check out RSS, or use RSS reader to subscribe this item

Saved Papers