Terahertz Permittivity of GaAs, SiO2, Pt and Ti

Wang Maoyan; Li Hailong; Zhang Meng; Han Na; Dong Yuliang; Xu Jun

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Terahertz Permittivity of GaAs, SiO2, Pt and Ti

Wang Maoyan 1 * #,Li Hailong 1,Zhang Meng 2,Han Na 3,Dong Yuliang 1,Xu Jun 1

1.School of Physical Electronics, University of Electronic Science and Technology of China

2.The 41st Research Institute of CETC (China Electronics Technology group Corporation)

3.The 14st institute of CETC

*Correspondence author

#Submitted by

Subject:

Funding: The Specialized Research Fund for the Doctoral Program of Higher Education （No.20120185120012）

Opened online:21 March 2014

Accepted by: none

Citation: Wang Maoyan,Li Hailong,Zhang Meng.Terahertz Permittivity of GaAs, SiO2, Pt and Ti[OL]. [21 March 2014] http://en.paper.edu.cn/en_releasepaper/content/4590287

Schottky diode is usually made of all kinds of semiconductor, medium, conductor and superconductor. The Terahertz permittivity of Gallium Arsenide (GaAs), Silicon Dioxide (SiO2), Platinum (Pt) and Titanium (Ti) for Schottky diode is briefly reviewed. Firstly, complex permittivity retrieval method of thin film based on the transmission and reflection coefficients of terahertz wave incident on the thin film is presented. The dispersive Drude-Lorentz model for GaAs, the relative flat value of real and imaginary parts of the permittivity for SiO2, and complex refractive index for Ti at Terahertz frequency is discussed. Semiconductor GaAs, conductor Pt and Ti are dispersive media i.e. the complex permittivity is a frequency response function. Among numerical method, Finite-Difference Time-Domain (FDTD) method is a popular algorithm for dispersive media. The deduction flowchart of shift operator FDTD method for dispersive media is given.

Keywords:Radio physics; permittivity; Terahertz; dispersive; method

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