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| The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes |
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Gao Xian 1 #,Tang Jinglong 1 *,Fang Dan 1,Wang Shuangpeng 2,Zhao Haifeng 2,Wei Zhipeng 1,Fang Xuan 1,Wang Xiaohua 1,Xu Zhikun 3,Ma Xiaohui 4
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1.State Key Laboratory on High-Power Semiconductor Lasers,Changchun University of Science and Technology,130022
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2.Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033
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3.Harbin Normal University, 150080,
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4.State Key Laboratory on High-Power Semiconductor Lasers,Changchun University of Science and Technology,130022
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| *Correspondence author |
| #Submitted by |
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| Subject: |
| Funding:
the Developing Project of Science and Technology of Jilin Province （No.20121816，201201116）, National Key Lab of High Power Semiconductor Lasers Foundation （No.No.9140C310101120C031115）, National Natural Science Foundation of China （No.61076039, 61204065, 61205193, 61307045）, Research Fund for the Doctoral Program of Higher Education of China （No.20112216120005） |
| Opened online: 4 August 2014 |
| Accepted by:
none |
| Citation: Gao Xian,Tang Jinglong,Fang Dan.The electrical characteristics of GaAs-MgO interfaces of GaAs MIS Schottky diodes[OL]. [ 4 August 2014] http://en.paper.edu.cn/en_releasepaper/content/4604839 |
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