Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature

WAN Lei; HU Ke; MA Cheng; ZOU Peng; XU Jinzhang

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Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature

WAN Lei 1 * #,HU Ke 1,MA Cheng 1,ZOU Peng 2,XU Jinzhang 1

1.School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), Hefei 230009

2.School of Materials Science and Engineering, Hefei University of Technology (HFUT), Hefei 230009

*Correspondence author

#Submitted by

Subject:

Funding: Specialized Research Fund for the Doctoral Program of Higher Education（No.20110111120002, 20110111110002）, National Natural Science Foundation(NSF) of China （No.51372061, 51302057）

Opened online:23 November 2015

Accepted by: none

Citation: WAN Lei,HU Ke,MA Cheng.Preparation and properties of Sb-doped Tin Dioxide films deposited by DC magnetron sputtering at room temperature[OL]. [23 November 2015] http://en.paper.edu.cn/en_releasepaper/content/4662232

In this study, antimony doped tin oxide (SnO2:Sb, ATO) films have been prepared by DC magnetron sputtering at room temperature. X-ray diffraction revealed that the films are composed of nano-crystals with an average grain size of less than 10 nm. The effect of deposition parameters on the structural, electrical and optical properties of ATO films was investigated. The O2 flow rate and DC power were found to affect the properties of the ATO films. With an O2 flow rate of 0.2 sccm and a DC power of 60W, the electrical properties of the ATO films were significantly improved. In the wavelength range from 550 to 900 nm, the average optical transmittance of the ATO films is over 80%.

Keywords:Thin Films; Sputtering; SnO2; Structural; Optical Transmittance

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