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| In this paper, we studied the effects on microstructure, ferroelectric and photovoltaic property of different Cr3+ dopants concentrations for Pb(Zr0.2Ti0.8)O3 (PCZT) ferroelectric films. Our experimental results showed that Cr3+ ions, as the accepters substituting for Ti4+ ions, decreased the remnant polarization (2Pr) when Cr3+ concentration was less than about 1% (molar ratio). However, Cr3+ ions were the donors substituting for Pb2+ ions and 2Pr was improved greatly when Cr3+ concentration was more than about 1%. The ferroelectric and photovoltaic outputs of PCZT films were optimized.When the concentration of Cr3+ ions was about 3%, the value of 2Pr reached 124.44 μC/cm2, which was about 2.8 times compared with that of PZT film (no Cr3+ dopants, 45.15 μC/cm2). Accordingly, the photovoltaic output of PCZT film (Cr3+ dopants 3%) was about 5 times compared with that of PZT film. |
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| Keywords:Thin PZT films; Ion doping; Sol-gel growth; Ferroelectricity; Photovoltaic |
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