Correlation and temperature dependence of the elastic modulus and the vibronic frequency in Ge and Si crystals

Mingxia Gu; Likun Pan; Zhuo Sun; Yichun Zhou; Shanzhong Wang; Sun Changqing

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Correlation and temperature dependence of the elastic modulus and the vibronic frequency in Ge and Si crystals

Mingxia Gu 1,Likun Pan 2,Zhuo Sun 2,Yichun Zhou 3,Shanzhong Wang 4,Sun Changqing 5 * #

1.School of Electrical and Electronic Engineering, Nanyang Technological University

2.Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University

3.Key laboratory of low-Dimensional Materials and Application Technologies, Ministry of Education, Xiangtan University

4.ST Microelectronics, 10 Science Park Road, #02-08, The ALPHA, Singapore Science park II

5.School EEE, NTU, Singapore

*Correspondence author

#Submitted by

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Funding: none

Opened online:11 April 2007

Accepted by: none

Citation: Mingxia Gu,Likun Pan,Zhuo Sun.Correlation and temperature dependence of the elastic modulus and the vibronic frequency in Ge and Si crystals[OL]. [11 April 2007] http://en.paper.edu.cn/en_releasepaper/content/12109

An analytical solution is presented correlating the elastic modulus and the vibronic frequency in a specimen with consistent understanding of the mechanism behind the temperature dependence of these parameters. The detectable elastic and vibronic properties could be related directly to the bonding identities and their response to the temperature change. Reproduction of the measured T-dependent Young’s modulus and Raman shift of Ge and Si reveals that the thermally driven softening of the elasticity and the Raman frequency arises from bond expansion and vibration, with derived information about the atomic cohesive energy and clarification of their interdependence.

Keywords:Raman, temperature, elastic modulus

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