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Low temperature deposition of p-type nc-Si:H thin films for superstrate a-Si:H based p-i-n solar cells
Hu Zhihua 1 * #,Shi Qingnan 2,Cai Yi 2,Elvira Fortunato 3,Rodrigo Martins 3,Diao Hongwei 4,Xu Ying 4,Liao Xianbo 4
1.New University of Lisbon，Kunming University of Science & Technology
2.nstrumental Center, Kunming University of Science & Technology
3.Department of Material Sciences and CEMOP/UNINOVA, New University of Lisbon, Portugal
4.Institute of semiconductors, Chinese Academy of Science
*Correspondence author
#Submitted by
Subject:
Funding: none
Opened online: 8 May 2007
Accepted by: none
Citation: Hu Zhihua,Shi Qingnan,Cai Yi.Low temperature deposition of p-type nc-Si:H thin films for superstrate a-Si:H based p-i-n solar cells[OL]. [ 8 May 2007] http://en.paper.edu.cn/en_releasepaper/content/12680
 
 
Boron doped nc-Si:H p-layers were deposited by PECVD technique at a low substrate temperature (~60 0C) with various hydrogen dilution ratio of 150, 100 and 50 respectively. Transmission studies were carried out on these nc-Si:H films to understand the systematic variation of the optical band gap. A detailed and well organized investigation was employed on nc-Si:H films using Raman scattering measurements to identify the exact origin of optical and acoustic vibration modes from Si nanocrystallites as well as from a-Si. Using peak fit software analysis the crystalline volume fraction of nc-Si:H p-layers was estimated as ~73%, 52% and ~16% respectively for 150, 100 and 50 hydrogen dilution. The presently developed nc-Si:H p-layers with different crystalline fraction have been incorporated in single junction a-Si:H solar cells with a superstrate configuration of TCO/p-nc-Si:H (20nm) /i-a-Si:H (350nm) /n-nc-Si:H (30nm) /Al (200nm). It was found that nc-Si:H p-layer with a slightly crystalline fraction is more beneficial for solar cell performances. Applying this slightly crystallized p-layer, together with a H2-plasma treatment of the p-layer prior to deposition of i-layer, an efficiency of 9.0 % with an open circuit voltage of 0.90 V, a fill factor of 0.65 and a short circuit current density of 15.2 mA/cm2 has been achieved.
Keywords:solar cells; nano silicon films
 
 
 

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