Gallium doped Czochralski silicon with phosphorus compensation for photovoltaic application

CHEN Peng; YU Xuegong; Yang Deren

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Gallium doped Czochralski silicon with phosphorus compensation for photovoltaic application

CHEN Peng,YU Xuegong * #,Yang Deren

State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 China

*Correspondence author

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Funding: Scientific Research Foundation for Returned Scholars, Ministry of Education of China （No.No. [2010]1174)）, Ph.D. Programs Foundation of Ministry of Education of China （No.No. 20090101120165）, National Key Technology R&D Program （No.No. 2011BAE03B13）

Opened online:20 December 2012

Accepted by: none

Citation: CHEN Peng,YU Xuegong,Yang Deren.Gallium doped Czochralski silicon with phosphorus compensation for photovoltaic application[OL]. [20 December 2012] http://en.paper.edu.cn/en_releasepaper/content/4501417

In this paper, we compare the properties of the gallium-doped Czochralski (Ga-Cz) silicon and the gallium-phosphorus co-doped Czochralski (GP-Cz) silicon. It shows that both majority and minority carrier mobility in Cz silicon are reduced due to the Ga and P compensation. However, the reduction of carrier mobility is not as severe as expected by Klaassen's model. The infrared absorption spectra for GP-Cz samples show that the Ga- and P-related bands significantly get broadened. It is suggested that a portion of P atoms are trapped by Ga atoms to form the Ga-P pairs, resulting in the reduction of carrier scattering centers. The solar cells based on GP-Cz silicon have comparable efficiencies with the Ga-Cz silicon solar cells, implying that the Ga and P compensation is not critical for its photovoltaic application.

Keywords:Solar cells; Czochralski silicon; dopant compensation; carrier mobility; efficiency

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