Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT

Hong Yang; Ning Sa; Jinfeng Kang

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Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT

Hong Yang,Ning Sa,Jinfeng Kang * #

Institute of Microelectronics, Peking University

*Correspondence author

#Submitted by

Subject:

Funding: 国家自然科学基金,教育部博士点基金,国家973项目（No.90407015,20040001026,2006CB302700）

Opened online:31 December 2007

Accepted by: none

Citation: Hong Yang,Ning Sa,Jinfeng Kang.Stress Electric-Field Dependent TDDB Characteristics of Ultra-Thin HfN/HfO2 Gate Stack with 0.9 nm EOT[OL]. [31 December 2007] http://en.paper.edu.cn/en_releasepaper/content/17620

In this paper, ultra thin CVD HfO2-gated nMOS capacitors (nMOSCs) with EOT~0.9 nm were fabricated. The time-dependent dielectric breakdown (TDDB) characteristics of the 0.9 nm HfO2 gate stack were studied under constant voltage stress (CVS). Area scaling consistent with Weibull statistics as in SiO2 was observed in the gate stack, demonstrating that intrinsic effects dominate time-dependent dielectric breakdown (TDDB) characteristics of the ultra thin HfN/HfO2 gate stack. For the first time, different TDDB characteristics under gate injection with low and high CVS were demonstrated in the sub-1 nm EOT HfO2 gated devices. The results show that interfacial layer initiated breakdown dominates the TDDB under low CVS and HfO2 bulk initiated breakdown under high CVS. A new breakdown model is proposed to explain the new demonstrated TDDB characteristics.

Keywords:High K Gate Dielectric, Reliability, Time-Dependent Dielectric Breakdown (TDDB), Constant Voltage Stress (CVS).

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