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Dielectric suppression of nanosolid silicon
Sun Changqing * #
Nanyang Technological University
*Correspondence author
#Submitted by
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Funding: none
Opened online:23 June 2005
Accepted by: none
Citation: Sun Changqing.Dielectric suppression of nanosolid silicon [OL]. [23 June 2005] http://en.paper.edu.cn/en_releasepaper/content/2262
 
 
An analytical solution is presented showing that the dielectric susceptibility of a nanosolid depends functionally on the crystal binding that determine the band gap and hence the essential processes of electron polarization, and on the electron–phonon coupling that is often overlooked in theory considerations. The derived solution covers all the measured values of band gap expansion that is beyond the reach of available approaches. Consistency between predictions and impedance measurements evidences the impact of atomic coordination-number imperfection on the dielectric performance of nanometric semiconductors and the validity of the given solution.
Keywords:Porous materials; semiconductors; dielectric; bonding; nanostructure
 
 
 

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