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Electron-phonon interaction in nanostructures
Sun Changqing 1 * #,L. K. Pan 2
1.Nanyang Technological University
2.School of Electrical and Electronic Engineering, Nanyang Technological University
*Correspondence author
#Submitted by
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Funding: none
Opened online: 5 July 2005
Accepted by: none
Citation: Sun Changqing,L. K. Pan.Electron-phonon interaction in nanostructures[OL]. [ 5 July 2005] http://en.paper.edu.cn/en_releasepaper/content/2367
 
 
Correlation between the size-enhanced Stokes shift and the size-enlarged band-gap expansion of porous silicon has been derived, which allows us to discriminate the effect of electron-phonon coupling from the effect of crystal binding on the blue shift in photoemission and photoabsorption of nansolid silicon. Matching predictions to the measured peak shift of both photoemission and absorption and to the measured band-gap expansion evidences the essentiality and validity of the recent bond order-length-strength (BOLS) correlation mechanism which suggests that the atomic coordination imperfection dictates the shape and size dependency of a nanosolid.
Keywords:nanostructures, photoluminescence, stokes shift
 
 
 

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