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Crystalline carbonitride formation is harder than the hexagonal Si-carbonitride crystallite
Sun Changqing * #
Nanyang Technological University
*Correspondence author
#Submitted by
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Funding: none
Opened online:12 July 2005
Accepted by: none
Citation: Sun Changqing.Crystalline carbonitride formation is harder than the hexagonal Si-carbonitride crystallite[OL]. [12 July 2005] http://en.paper.edu.cn/en_releasepaper/content/2428
 
 
t is shown that large and well-faceted hexagonal crystallites can grow on Si and Ti substrates under higher nitrogen gas-flow in the gases mixture of CH4 and H2 in the normal process of diamond deposition using MP-CVD. Grazing incidence GIXRD, EDX, WDX and Raman analysis revealed that these crystals are silicon-carbonitride other than carbonitride as we expected and usually regarded. This indicates that the hypothetic covalent carbonitride forms really harder than the crystallite with Si substitution. Comparing films deposited on Ti alloy substrates, with and without Si chips putting aside during the deposition, we found that the Si chips activated by the plasma sputtering supplies Si sources for crystallite SiCN formation on Ti substrate. The hexagonal SiCN structure and its lower hardness are attributed to the C3v-symmetric quasi-tetrahedral nitride with a nonbonding lone pair. The involvement of the less electronegative Si specimen may make the SiCN forms easier than the covalent c
Keywords:crystal growth; hard materals; thin film technology
 
 
 

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