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Effect of total pressure on crystallinity of boron carbon nitride thin films deposited by RF magnetron sputtering
Gong Enle *,Yu Jie,Liu Yi
Shenzhen Graduate School, Harbin Institute of Technology University
*Correspondence author
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Funding: none
Opened online: 8 October 2008
Accepted by: none
Citation: Gong Enle,Yu Jie,Liu Yi.Effect of total pressure on crystallinity of boron carbon nitride thin films deposited by RF magnetron sputtering[OL]. [ 8 October 2008] http://en.paper.edu.cn/en_releasepaper/content/24603
 
 
Boron carbon nitride (BCN) thin films were deposited on silicon substrates by radio frequency(13.56MHz)magnetron sputtering from hexagonal boron nitride (h-BN) and graphite targets. Deposited BCN thin films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). The growth total pressure ranged from 0.2 to 6.0Pa. The deposition total pressure was observed to have significant effect on the composition and crystallinity of BCN films. Full width at half maximum (FWHM) of BCN thin films changed with the total pressure increase and better crystallinity was observed for thin films prepared at 1.0Pa.
Keywords:BCN thin films;RF magnetron sputtering;total pressure;crystallinity;FWHM
 
 
 

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